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Method of manufacturing photo masks

A mask and lithography technology, applied in the field of manufacturing lithography masks, can solve problems such as resolution loss

Inactive Publication Date: 2019-05-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] When the semiconductor device feature size has been reduced below the wavelength of the light used in the photolithography process, during the process of transferring the reticle pattern to the wafer photoresist, at the edge of the feature pattern formed on the reticle, the light Diffraction of the resulting loss of resolution

Method used

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  • Method of manufacturing photo masks
  • Method of manufacturing photo masks
  • Method of manufacturing photo masks

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Embodiment Construction

[0097] It should be appreciated that the following disclosure provides many different embodiments, or examples, for implementing various features of the invention. Each component and arrangement of the present disclosure, and its specific embodiment or example are described below to simplify the description. Of course, these examples are not intended to limit the present invention. For example, the dimensions of the elements are not limited to the disclosed ranges or values, but depend on the process conditions and / or the device characteristics to be obtained. In addition, if the description has the first feature formed on or over the second feature, it may include embodiments where the first feature and the second feature are formed in direct contact, or may include additional features formed on the first feature and the second feature. An embodiment in which the first feature and the second feature are not in direct contact between two features. Various features may be arb...

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Abstract

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. Byusing an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer isdeveloped using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Description

technical field [0001] The present disclosure relates to a mask used in semiconductor manufacturing process and its manufacturing method and manufacturing equipment, in particular to a mask for suppressing electron beam proximity effect and charging effect and its manufacturing method. Background technique [0002] When the semiconductor device feature size has been reduced below the wavelength of the light used in the photolithography process, during the process of transferring the reticle pattern to the wafer photoresist, at the edge of the feature pattern formed on the reticle, the light Diffraction will result in a loss of resolution. Although the minimum patternable resolution (e.g. pattern pitch) is limited by an optical lithography tool (e.g. optical scanner / stepper), semiconductor device design rules still require smaller or finer pattern resolution . At the same time, the requirements for masks have become increasingly stringent. Contents of the invention [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/76G03F7/20
CPCG03F1/36G03F1/78H01J37/3174G03F1/76G03F7/70716G03F7/2002H01J2237/31771G03F7/70616G03F7/70608G03F7/70358G03F7/70441
Inventor 陈建诚李信昌陈嘉仁沈仓辉许呈韶何彦政张世明
Owner TAIWAN SEMICON MFG CO LTD