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Preparation method of high-purity nanoporous copper film

A nanoporous copper, high-purity technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of low purity of nanoporous copper film, and achieve the effect of improving the purity

Inactive Publication Date: 2019-05-24
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a high-purity nanoporous copper film, which solves the problem that the purity of the nanoporous copper film in the prior art is not high

Method used

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  • Preparation method of high-purity nanoporous copper film
  • Preparation method of high-purity nanoporous copper film
  • Preparation method of high-purity nanoporous copper film

Examples

Experimental program
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preparation example Construction

[0029] The invention provides a method for preparing a high-purity nanoporous copper film, which is specifically implemented according to the following steps, and the preparation flow chart is as follows figure 1 Shown:

[0030] A method for preparing a high-purity nanoporous copper film, characterized in that it is specifically implemented according to the following steps:

[0031] Step 1, cutting the copper substrate;

[0032] Step 2, cleaning the copper substrate obtained in step 1;

[0033] Fix the copper substrate cut in step 1 on the sample base of the magnetron sputtering apparatus, fix the pure copper target and the pure aluminum target on the target position, and then rotate the baffle to the middle of the target platform and the target position , close the chamber door to make the vacuum chamber sealed, open the argon gas flow valve after vacuuming, let in argon gas to increase the pressure in the vacuum chamber, adjust the bias voltage of the copper substrate, and...

Embodiment 1

[0045] This embodiment discloses a method for preparing a high-purity nanoporous copper film, which is specifically implemented according to the following steps:

[0046] The base copper sheet used in the experiment is a single-sided polished copper sheet with a diameter of 100±0.5mm and a thickness of 500±15μm.

[0047] Step 1, cutting the copper sheet; cutting the purchased silicon wafer with a diamond knife or a laser, and cutting it into several square specifications of 10×10mm;

[0048] Step 2, cleaning the copper substrate obtained in step 1;

[0049] Fix the copper substrate cut in step 1 on the sample base of MSIP016 magnetron sputtering equipment, turn on the mechanical pump and pre-evacuate to 4×10 -3 After Pa, open the argon gas flow valve, pass in argon gas, make the pressure in the vacuum chamber reach 0.1Pa, then adjust the substrate bias voltage to 350V, set the sputtering current of the copper target to 0.2A, and the sputtering voltage to 300V. The sputtering...

Embodiment 2

[0059] This embodiment discloses a method for preparing a high-purity nanoporous copper film, which is specifically implemented according to the following steps:

[0060] The base copper sheet used in the experiment is a single-sided polished copper sheet with a diameter of 100±0.5mm and a thickness of 500±15μm.

[0061] Step 1, cutting the copper sheet; cutting the purchased silicon wafer with a diamond knife or a laser, and cutting it into several square specifications of 10×10mm;

[0062] Step 2, cleaning the copper substrate obtained in step 1;

[0063] Fix the copper substrate cut in step 1 on the sample base, turn on the mechanical pump and pre-evacuate to 4×10 -3 After Pa, open the argon gas flow valve, pass in argon gas, make the pressure in the vacuum chamber reach 0.1Pa, then adjust the substrate bias voltage to 350V, set the sputtering current of the copper target to 0.2A, and the sputtering voltage to 300V. The sputtering current of the target is 0.3A, the sputte...

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Abstract

The invention discloses a preparation method of a high-purity nanoporous copper film. The preparation method comprises the following specific steps: 1, a copper substrate is cut; 2, the copper substrate is cleaned, specifically, sputtering currents and sputtering voltages of a copper target material and an aluminum target material are adjusted, pre-sputtering is conducted for 4-6 min, and the copper substrate is cleaned; 3, an alloy precursor is prepared, specifically, in the sputtering process of the copper target material and the aluminum target material, the content of copper atoms in a thin film material is controlled to be 25%-35%, and the alloy precursor is prepared after sputtering; and 4, the alloy precursor is corroded, specifically, the prepared alloy precursor is placed into a 0.1-2 mol / L H2SO4 solution, and placed into deionized water after being corroded, ion impurities are removed, and then the nanoporous copper film can be prepared. The copper substrate is selected as asubstrate material, binding force between the film and a matrix is enhanced, and thus the purpose of improving the purity of the nanoporous copper film is achieved.

Description

technical field [0001] The invention belongs to the technical field of nanoporous metal materials, and in particular relates to a preparation method of a high-purity nanoporous copper film. Background technique [0002] Nanoporous metals are a new class of functional materials developed in recent years. Nanoporous metals have excellent properties in many aspects such as chemical properties, mechanical properties, and surface Raman scattering properties. They are used in catalysis, sensing, new energy, biomedicine, etc. It has broad application prospects in many fields. Nanoporous copper films in nanoporous metals exhibit excellent physical and chemical properties in the fields of catalysis, biosensors, and energy due to their low price, and are expected to replace nanoporous noble metals (such as nanoporous gold). Common methods for preparing nanoporous metal films include template method, dealloying method and so on. The dealloying method stands out among many methods due...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/02C23C14/16C23C14/58
Inventor 胡义锋吴兆虎陈玉洁郭显聪
Owner XIAN UNIV OF TECH
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