Double printing method of front electrode of N-type battery
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 北京市合众创能光电技术有限公司
- Publication Date
- 2019-06-11
Abstract
Description
technical field
[0001] The invention relates to the technical field of battery printing, in particular to a double-printing method for front electrodes of N-type batteries. Background technique
[0002] At present, P-type crystalline silicon batteries occupy an absolute share of the crystalline silicon battery market. However, the constant pursuit of efficiency improvement and cost reduction is an eternal theme in the photovoltaic industry. Compared with conventional P-type single crystal silicon, N-type single crystal silicon has the advantages of high minority carrier lifetime and small light-induced attenuation, and has greater room for efficiency improvement. At the same time, N-type single crystal modules have good weak light response and low temperature coefficient. advantage. Therefore, the N-type single crystal system has the dual advantages of high power generation and high reliability. With the introduction of new technologies and processes for batteries, the ef...