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Double printing method of front electrode of N-type battery

A technology of front electrode and printing method, applied in printing, circuit, printing device and other directions, can solve problems such as affecting battery efficiency, and achieve the effect of increasing light-receiving surface, improving aspect ratio, and improving photoelectric conversion efficiency

Pending Publication Date: 2019-06-11
北京市合众创能光电技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the deficiency that the single printing of the existing crystalline silicon battery will affect the efficiency of the battery, the present invention provides a double printing method for the front electrode of the N-type battery

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] After N-type crystalline silicon double-sided texturing, expand boron on the front to form a P-type layer, and expand phosphorus on the back to form an N+ type layer. Print a 40um wide silver electrode on the back phosphorus-expanded surface and dry it. Print the first boron-expanded surface on the front. A layer of silver-aluminum electrodes with a width of 45um is dried, and then a second layer of silver electrodes with a width of 40um is printed on the first layer of silver-aluminum electrodes. The second layer of electrodes covers the first layer of electrodes, and then co-sintered to form electrode.

Embodiment 2

[0026] After N-type crystalline silicon double-sided texturing, expand boron on the front to form a P-type layer, and expand phosphorus on the back to form an N+ type layer. Print a 30um wide silver electrode on the back phosphorus-expanded surface and dry it. Print the first boron-expanded surface on the front. A layer of silver-aluminum electrodes with a width of 40um is dried, and then a second layer of silver electrodes with a width of 45um is printed on the first layer of silver-aluminum electrodes, and the second layer of electrodes covers the first layer of electrodes, followed by co-sintering to form electrode.

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Abstract

The invention relates to the technical field of battery printing, in particular to a double printing method of a front electrode of an N-type battery. The double printing method comprises the following steps: (1) printing silver aluminum paste as a first layer of a boron expansion surface of an N-type crystalline silicon solar battery; (2) drying the first layer of the boron expansion surface of the N-type crystalline silicon solar battery; (3) printing silver paste as a second layer of the boron expansion surface of the N-type crystalline silicon solar battery; and (4) co-sintering the firstlayer and the second layer of electrodes on the boron expansion surface of the N-type crystalline silicon solar battery to form an electrode. According to the invention, by virtue of the double printing method, the first layer of silver aluminum paste can reduce the contact resistance of gold and silicon, and the second layer of silver electrode can reduce the line resistance of the electrode; meanwhile, the double printing method can break through a ceiling with high single screen printing aspect ratio, can effectively improve the aspect ratio of electrode grid lines, can not only increase the light receiving surface of the battery, but also can reduce the overall line resistance of the grid electrode, thereby greatly improving the photoelectric conversion efficiency of the battery.

Description

technical field [0001] The invention relates to the technical field of battery printing, in particular to a double-printing method for front electrodes of N-type batteries. Background technique [0002] At present, P-type crystalline silicon batteries occupy an absolute share of the crystalline silicon battery market. However, the constant pursuit of efficiency improvement and cost reduction is an eternal theme in the photovoltaic industry. Compared with conventional P-type single crystal silicon, N-type single crystal silicon has the advantages of high minority carrier lifetime and small light-induced attenuation, and has greater room for efficiency improvement. At the same time, N-type single crystal modules have good weak light response and low temperature coefficient. advantage. Therefore, the N-type single crystal system has the dual advantages of high power generation and high reliability. With the introduction of new technologies and processes for batteries, the ef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18B41M1/26B41M1/22B41M1/12
CPCY02P70/50
Inventor 顾生刚
Owner 北京市合众创能光电技术有限公司
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