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Mold for growing rare earth ion doped crystals with heterogeneous high-melting-point arc-shaped seed crystals and growth method

A rare earth ion, high melting point technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low growth efficiency, easy melting of seed crystals, single growth type, etc., to achieve stable growth interface and reduce melt Volatile, no mechanical disturbance effect

Pending Publication Date: 2019-06-21
NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems existing in the above-mentioned prior art, and provide a mold and a growth method that can grow rare earth ion-doped crystals with heterogeneous high-melting-point arc-shaped seed crystals, which overcomes the problem that the traditional method of seed crystals is easy to melt and grow. Problems of low efficiency and single growth species

Method used

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  • Mold for growing rare earth ion doped crystals with heterogeneous high-melting-point arc-shaped seed crystals and growth method
  • Mold for growing rare earth ion doped crystals with heterogeneous high-melting-point arc-shaped seed crystals and growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The mold used was a 12 cylinder mold with a diameter of 10 mm and a length of 210 mm.

[0037] S01, firstly, an arc-shaped pure calcium fluoride crystal seed crystal is placed in the arc-shaped seed crystal region 6 of the crucible 2 . According to Dy x Pb (1-x) f 2+x (x=0.01, 0.02, 0.03...) Chemical formula, weigh all high-purity raw materials and 1% oxygen scavenger of the total mass of raw materials in proportion, mix well and put them into cylindrical molds respectively, and screw on the crucible cover;

[0038] S02, vacuumize, and pass helium gas as a protective atmosphere;

[0039] S03, heating up to 150°C, and keeping it warm for 5 hours, to remove the moisture in the raw materials;

[0040] S04, continue to heat up until the raw materials are completely melted, and heat-treat at a constant temperature for 5 hours;

[0041] S05, slowly lower the temperature at 0.5-1.0°C / h to crystallize the melt in the crucible from bottom to top;

[0042]S06, after the cry...

Embodiment 2

[0045] The mold used was a 24 cylinder mold with a diameter of 20 mm and a length of 210 mm.

[0046] S01, firstly, an arc-shaped pure YAG crystal seed crystal is placed in the arc-shaped seed crystal region 6 of the crucible 2 . According to Ca 3 Nb 1.6875 Ga 3.1875 o 12 and xRe 3 Ga 5 o 12 (Re=Pr, Dy, Ho, Tb..., x=0.01, 0.02, 0.03...) chemical formula, weigh all the high-purity raw materials in proportion, mix them well and press them, and sinter them at high temperature, and then put them into cylindrical molds Inside, screw on the crucible lid;

[0047] S02, vacuumize, and pass helium gas as a protective atmosphere;

[0048] S03, heating up to 200°C, and keeping it warm for 5 hours, to remove the moisture in the raw materials;

[0049] S04, continue to heat up until the raw materials are completely melted, and heat-treat at a constant temperature for 5 hours;

[0050] S05, slowly lower the temperature at 0.5-1.0°C / h to crystallize the melt in the crucible from bo...

Embodiment 3

[0054] The molds used were 22 cylindrical molds 3 with a diameter of 15 mm and a length of 240 mm.

[0055] S01, firstly, an arc-shaped pure YAG crystal seed crystal is placed in the arc-shaped seed crystal region 6 of the crucible 2 . According to Ca 3 Nb 1.6875 Ga 3.1875 o 12 and xRe 3 Ga 5 o 12 (Re=Pr, Dy, Ho, Tb..., x=0.01, 0.02, 0.03...) chemical formula, weigh all the high-purity raw materials in proportion, mix them well and press them, and sinter them at high temperature, and then put them into cylindrical molds 3, screw on the crucible cover 1;

[0056] S02, vacuumize, and pass helium gas as a protective atmosphere;

[0057] S03, heat up to 350°C, and keep it warm for 7 hours, to remove the moisture in the raw materials;

[0058] S04, continue to heat up until the raw materials are completely melted, and heat treatment at constant temperature for 3 hours;

[0059] S05, slowly lowering the temperature at 0.25-1.0°C / h to crystallize the melt in the crucible 2 ...

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Abstract

The invention provides a mold for growing rare earth ion doped crystals with heterogeneous high-melting-point arc-shaped seed crystals. The mold comprises a crucible comprising a conical cavity and acylindrical cavity, wherein the conical cavity is an arc-shaped seed crystal area, and a cylindrical mold with a heat dissipation hole is arranged in the middle of the cylindrical cavity; a pluralityof strip-shaped conical holes are formed in a cylindrical mold, a crucible cover is arranged at the top of each conical hole, and a vent hole is formed in the middle of the crucible cover; the crucible, the cylindrical mold and the heat dissipation hole are symmetric to the central axis. Besides, the invention also provides a crystal growth method. The method comprises steps as follows: material preparation, furnace charging, vacuum pumping, introduction of protective gas, heating for melting of materials, crystal growth, annealing and taking out of crystals. Compared with the prior art, the mold is simple in structure and easy to process, adopts simple growth technological process and can be used for growing different types of crystals doped with different concentrations of rare earth ions one time.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a growth method of a rare earth ion doped crystal, in particular to a mold and a growth method for growing a rare earth ion doped crystal with heterogeneous high melting point arc seed crystals. Background technique [0002] Particles (atoms, molecules, ions or atomic groups) in crystals are arranged periodically and orderly, while glass and ceramics are amorphous structures with short-range order and long-range disorder; the glass matrix has a completely disordered amorphous structure, Its emission spectrum is the smoothest, but its efficiency and application range are severely limited due to its small emission cross section, short radiation lifetime, and low thermal conductivity. Crystals generally have higher thermal conductivity and greater mechanical properties. The doping concentration in the crystal is affected by the ordered crystal field, and its absorption cross-se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/34C30B15/36C30B29/12C30B29/28
Inventor 薛艳艳徐军吴锋徐晓东李东振王东海王庆国
Owner NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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