Semiconductor carrier type judgment and band gap measurement method

Abstract

The invention discloses a semiconductor carrier type judgment and band gap measurement method. A Kelvin probe method is used to measure a work function of an extrinsic semiconductor material at different temperatures, the change law of a Fermi level of the material along with temperature is determined, and the carrier type is judged; and on the basis, in combination of the relationship of the extrinsic semiconductor material work function along with temperature changes, the change relationship between the Fermi level caused by electron thermal excitation and the relative position of a conduction band and a valence band is analyzed, and the band gap is solved. The measurement method disclosed in the invention is based on a semiconductor energy band theory, compared with the conventional optical band gap measurement method, the method of the invention can measure the band gap of a non-transmissive semiconductor material while the accuracy is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material detection, in particular to a method for judging the type of semiconductor carriers and measuring the forbidden band width. Background technique [0002] The development of semiconductor materials is the basis and premise to promote the progress of semiconductor science and technology. The forbidden band width is an important characteristic parameter that determines the conductivity of semiconductors. The determination of this parameter is of great significance in the study of the crystal structure and energy band structure of semiconductor materials. [0003] There are many methods for measuring and characterizing the bandgap of semiconductor materials, such as optical absorption coefficient method, photoconductivity method and photoluminescence spectroscopy. Among them, the optical absorption coefficient method is first based on the optical method to measure the absorption coeff...

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Problems solved by technology

Among them, the optical absorption coefficient method is first based on the optical method to measure the absorption coefficient α of the semiconductor thin film, and then do (αhν) by the Tauc method n The linear part of the -(hν) curve intercepts the horizontal axis, and there is a large human error; the photoconductivity method needs a tedious normalization process during the test; and the photoluminescence spectroscopy often only qualitatively compares the samples. Bandgap width

Not only that, all the above measurement methods are susceptible to factors such as exciton absorption or exciton emission, absorption or radiative recombination between the intrinsic band and shallow impurities, which brings difficulties to accurately measure the forbidden band width

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