Quantum dot film, preparation method thereof, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TCL CORPORATION
- Publication Date
- 2019-06-25
- Estimated Expiration
- Not applicable · inactive patent
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Figure 1
Abstract
Description
technical field
[0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot thin film and a preparation method thereof, as well as a QLED device and a preparation method thereof. Background technique
[0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dot materials (Quantum dots, QDs) as the light-emitting layer, which has incomparable advantages compared with other light-emitting materials, such as Controlled small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. In general, organic ligands are attached to the surface of quantum dots through chelation and other methods.
[0003] The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate the defects on the surface of quantum dot...