Quantum dot film, preparation method thereof, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A quantum dot and quantum dot luminescence technology, applied in the field of quantum dots, can solve the problems of poor uniformity of quantum dot films, easy agglomeration and sedimentation of ligands, selectivity limitation, etc., to expand the solvent selection range, improve luminescence performance, select wide range of effects

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a quantum dot thin film and its preparation method, aiming to solve the problem that the ligands are easy to agglomerate and settle, and the selectivity is limited in the preparation process of the existing quantum dot thin film, so that quantum dots can be obtained. Technical problems of poor film uniformity and low efficiency

Method used

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  • Quantum dot film, preparation method thereof, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

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preparation example Construction

[0025] On the one hand, an embodiment of the present invention provides a method for preparing a quantum dot film, comprising the following steps:

[0026] S01: Provide a quantum dot prefabricated film and a solution containing a replacement ligand. The quantum dots in the quantum dot prefabricated film contain an initial surface ligand. The general structural formula of the replacement ligand is: X 1 -R-X 2 ;

[0027] Among them, X 1 and x 2 is a functional group that can be combined with the surface of the quantum dot, and R is a hydrocarbon group or a hydrocarbon derivative with a conjugated group;

[0028] S02: performing liquid-phase ligand replacement on the quantum dot prefabricated film and the solution containing the replacement ligand, to obtain a quantum dot film with the replacement ligand bound to the surface of the quantum dot.

[0029] The preparation method of the quantum dot thin film provided by the embodiment of the present invention is to perform in-sit...

Embodiment 1

[0070] A method for preparing a quantum dot film, comprising the steps of:

[0071]Provide CdSe quantum dot prefabricated film and replacement ligand solution (p-phenylenediamine ethanol solution), the initial surface ligand in this quantum dot prefabricated film is OA;

[0072] Immerse the CdSe quantum dot prefabricated film into the replacement ligand solution, take it out after soaking for 10min, and then transfer it to a vacuum chamber, adjust the vacuum to 10Pa and maintain it for 30min to remove the uncoordinated ligand and solvent of the quantum dot film .

Embodiment 2

[0074] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0075] Dissolving p-phenylenediamine in ethanol to prepare a displacement ligand solution;

[0076] Print the PEDOT hole injection layer, TFB hole transport layer, and CdSe quantum dot film sequentially on the ITO anode, then immerse the CdSe quantum dot film in the above replacement ligand solution, take it out after soaking for 10min, and then transfer it to the vacuum chamber , adjust the vacuum degree to 10Pa and maintain it for 30 minutes to remove the uncoordinated ligands and solvents in the quantum dot film, and the quantum dot light-emitting layer;

[0077] A ZnO electron transport layer is printed on the ligand-exchanged quantum dot light-emitting layer, and finally an Al cathode is evaporated to obtain a positive-type structure quantum dot light-emitting diode.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot film, a preparation method thereof, a QLED (Quantum dot Light-Emitting Diode) device and a preparation method thereof. The preparation method of the quantum dot film comprises the steps of providing a quantum dot prefabricated film and a solution containing a displacement ligand, wherein the quantum dot in the quantum dot prefabricated film contains an initial surface ligand, the structural general formula of the displacement ligand is X1-R-X2, both X1 and X2 are a functional group capable of being bound with the surface of the quantum dot, and R is an alkyl or alkyl derivative with a conjugated group; and carrying out gas-phase ligand displacement on the quantum dot prefabricated film and the solution containing the displacement ligand to obtain a quantum dot film with the quantum dot surface being bound with the displacement ligand. The displacement ligand with the conjugated groupis adopted to carry out ligand displacement without the problem of solution settlement, the carrier transmission in the quantum dot film is improved, and the light-emitting performance of the devicecan be correspondingly improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot thin film and a preparation method thereof, as well as a QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dot materials (Quantum dots, QDs) as the light-emitting layer, which has incomparable advantages compared with other light-emitting materials, such as Controlled small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. In general, organic ligands are attached to the surface of quantum dots through chelation and other methods. [0003] The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate the defects on the surface of quantum dot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
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