Method for preparing antigravity ultrathin micro heat pipe
A micro-heat pipe and anti-gravity technology, applied in the field of anti-gravity ultra-thin micro-heat pipe preparation, can solve the problems that the heat pipe cannot be applied in anti-gravity occasions, the capillary pressure of the liquid-absorbing core structure is insufficient, and it is difficult to compact light and thin electronic equipment, and achieve a compact structure. , Small thermal resistance, ultra-thin effect
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Embodiment 1
[0031] A kind of preparation method of anti-gravity ultra-thin micro heat pipe of present embodiment, such as figure 1 shown, including the following steps:
[0032] (1) Select a monocrystalline silicon wafer suitable for laser processing and have high thermal conductivity as a raw material, clean the monocrystalline silicon wafer and the monocrystalline silicon support with deionized water for 20 minutes by ultrasonic vibration, and the ultrasonic frequency is 25kHz, and then place the monocrystalline silicon wafer The crystalline silicon wafers were dried in a drying oven at 95°C for 15 minutes.
[0033] (2) if Figure 2~4 As shown, the femtosecond laser processing is performed on one side of the single crystal silicon wafer twice continuously to process the shuttle-shaped structure arranged in an array; among them, the shuttle-shaped structure arranged in an array is processed for the first time as a capillary liquid-absorbing core. For the second time, a plurality of gro...
Embodiment 2
[0037] In this embodiment, a method for preparing an anti-gravity ultra-thin micro heat pipe comprises the following steps:
[0038] (1) Select a monocrystalline silicon wafer suitable for laser processing and have high thermal conductivity as a raw material, clean the monocrystalline silicon wafer and the monocrystalline silicon support with deionized water for 30 minutes with ultrasonic vibration, and the ultrasonic frequency is 25kHz, and then place the monocrystalline silicon wafer The crystalline silicon wafers were dried in a drying oven at 80°C for 10 minutes.
[0039](2) Continuously perform femtosecond laser processing twice on one side of the monocrystalline silicon wafer to process a shuttle-shaped structure arranged in an array; wherein, the shuttle-shaped structure arranged in an array is processed for the first time as a capillary liquid-absorbing core, For the second time, a plurality of grooves with rectangular cross-sections along the length direction of the m...
Embodiment 3
[0043] In this embodiment, a method for preparing an anti-gravity ultra-thin micro heat pipe comprises the following steps:
[0044] (1) Select a monocrystalline silicon wafer suitable for laser processing and have high thermal conductivity as a raw material, clean the monocrystalline silicon wafer and the monocrystalline silicon support with deionized water for 20 minutes by ultrasonic vibration, and the ultrasonic frequency is 25kHz, and then place the monocrystalline silicon wafer The crystalline silicon wafers were dried in a drying oven at 95°C for 15 minutes.
[0045] (2) Continuously perform femtosecond laser processing twice on one side of the monocrystalline silicon wafer to process a shuttle-shaped structure arranged in an array; wherein, the shuttle-shaped structure arranged in an array is processed for the first time as a capillary liquid-absorbing core, For the second time, multiple grooves with rectangular cross-sections along the length direction of the monocrys...
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Abstract
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