Microchannel-nanoporous composite structure evaporator of substrate level of GaN HEMT device

Abstract

A microchannel-nanoporous composite structure evaporator of a substrate level of a GaN HEMT device belongs to the technical field of microelectronic device cooling. Cooling at the substrate level of the GaN HEMT device reduces the use of interface bonding materials, greatly reduces junction temperature and extends the service life of the GaN HEMT device. The evaporator provided by the applicationconsists of an upper substrate (6) and a lower substrate (5), wherein the upper substrate comprises a nanoporous region (2), a fluid inlet (1) and a fluid outlet (8), and the front surface of the lower substrate is engraved with a microchannel region (4), an inlet liquid storage tank (3) and an outlet liquid storage tank (9). The upper substrate (6) and the lower substrate (5) are subjected to a packaging process by a bonding technique to ensure better contact between the nanoporous structure region (2) and the microchannel region (4). The device utilizes phase change evaporation of the liquidin the nanopore for heat dissipation, and has the characteristics such as stable operation, uniform temperature distribution, less required working medium and low operating pressure.

Description

technical field [0001] The invention belongs to the technical field of GaN HEMT device substrate-level cooling, and relates to a heat dissipation design of an evaporator with a microchannel-nano porous composite structure. Background technique [0002] With the development of advanced material manufacturing technology and high-power electronic device performance, Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) devices are used in various fields such as wireless communication and radar, especially in military and aerospace fields. However, the resulting extremely high heat flux problem limits the power of GaN HEMT devices to one-tenth of their potential power output in order to maintain acceptable junction temperatures and prolong device lifetime. GaN HEMT devices are in the range of 5-10mm 2 Generates 5kW / cm2 on a plane area of 2 The sub-millimeter hot spot, multi-hot zone distribution exists, and the background heat flow on the entire substrate has reached ...

AI Technical Summary

Problems solved by technology

However, the resulting extremely high heat flux problem limits the power of GaN HEMT devices to one-tenth of their potential power output in order to maintain acceptable junction temperatures and prolong device life

Images