A Tunneling Field Effect Transistor Effectively Increases On-state Current

Abstract

The invention discloses a tunneling field effect transistor for effectively increasing the on-state current, which belongs to the field of semiconductor devices and is used for increasing the on-state current of the tunneling field effect transistor. In the present invention, the upper and lower gate dielectric layers of the tunneling field effect transistor are extended to the source region and partly covered to the source region, the surface of the gate dielectric layer on one side of the source region is covered with a metal gate, and the surface of the gate dielectric layer on the other side of the source region is covered with a bias electrode , the bias electrode and the metal grid on this side are separated by a partition wall to form an up-and-down asymmetric structure. By applying a bias voltage to the bias electrode, or using the metal work function difference between the bias electrode and the metal grid, the gate electrode is enhanced. The electric field perpendicular to the channel direction on the upper and lower sides of the covered part of the source region increases the strength of the carrier line tunneling, and the total carrier tunneling area and tunneling probability increase, thereby effectively increasing the device's on-state current.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and relates to a tunneling field effect transistor, in particular to a tunneling field effect transistor capable of effectively increasing the on-state current. Background technique [0002] Tunneling Field Effect Transistor (TFET) is based on the working principle of band-band tunneling, and its subthreshold swing can break through the theoretical limit of 2.3kT / q of MOSFET subthreshold swing, which is 60mV / dec at room temperature. Taking N-type TFET as an example, the source region is heavily doped with P type, the channel region is lightly doped with N type, and the drain region is heavily doped with N type, the source is connected to low potential, and the drain is connected to high potential. When a positive voltage is applied to the gate electrode, the energy band of the channel region drops, and when the conduction band of the channel region drops below the valence band of the source re...

AI Technical Summary

Problems solved by technology

Due to the symmetrical distribution of the upper and lower gate electrodes, the electric field in the vertical direction is limited. When the channel thickness is small, line tunneling cannot occur, thus limiting the tunneling current.

Images