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QLED device and its preparation method

A device and prefabricator technology, applied in the field of QLED devices and their preparation, can solve problems affecting electron injection efficiency, etc., and achieve the effects of increasing electron injection efficiency, promoting electron injection, and improving device efficiency

Active Publication Date: 2021-11-09
SHENZHEN TCL IND RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED device and its preparation method, aiming to solve the problem of the suspension of electrons injected by the cathode and the -OH on the surface of the electron transport layer in the existing QLED device when metal oxide nanoparticles are used as the material of the electron transport layer. The combination of bonds and oxygen vacancies affects the efficiency of electron injection

Method used

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  • QLED device and its preparation method
  • QLED device and its preparation method
  • QLED device and its preparation method

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Experimental program
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Embodiment approach

[0038] As an embodiment, the preparation method of the QLED device includes the following steps:

[0039] S01 provides a prefabricated device, the surface of the prefabricated device is provided with the electronic functional layer;

[0040] S02 Depositing an interface modification layer material on the surface of the electronic functional layer to form an interface modification layer.

[0041] As another embodiment, the preparation method of the QLED device includes the following steps:

[0042] Q01 provides a prefabricated device, the surface of the prefabricated device is provided with the cathode;

[0043] Q02 Depositing an interface modification layer material on the surface of the cathode to form an interface modification layer.

[0044] The preparation method of the QLED device provided by the embodiment of the present invention only needs to deposit a layer of fullerene lipid derivatives and fullerene alcohol derivatives on the surface of the cathode or electron tran...

Embodiment 1

[0051] An inverse QLED device, comprising a substrate, a cathode binding station on the surface of the substrate, an interface modification layer, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer and an anode sequentially arranged on the surface of the cathode, Wherein, the material of the interface modification layer is a fullerene lipid derivative (IPBBM), a fullerene alcohol derivative (PCBE-OH), a fullerene carboxylic acid derivative (PCBA), a fullerene phosphate At least one of ester derivatives (BPCPO) and fullerene cyano derivatives (PCBB-CN-C8).

[0052] The preparation method of the inverted QLED device comprises the following steps:

[0053] Place the patterned ITO substrate in acetone, lotion, deionized water, and isopropanol in sequence for ultrasonic cleaning. Each of the above steps requires about 15 minutes of ultrasonic cleaning; after the ultrasonic is completed, place the ITO in a clean oven to dry Dry and set aside.

...

Embodiment 2

[0060] A positive QLED device, comprising a substrate, an anode bonded to the surface of the substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, an interface modification layer and a cathode sequentially arranged on the anode, wherein , the material of the interface modification layer is a fullerene lipid derivative (IPBBM), a fullerene alcohol derivative (PCBE-OH), a fullerene carboxylic acid derivative (PCBA), a fullerene phosphate At least one of fullerene cyano derivatives (BPCPO) and fullerene cyano derivatives (PCBB-CN-C8).

[0061] The preparation method of the positive QLED device comprises the following steps:

[0062] Deposit the hole transport layer PVK on the ITO, the thickness of this layer is 50nm, heat and anneal at 150°C for 15min.

[0063] After the upper sheet is cooled, QDs are deposited on it. The thickness of this layer is 40nm without heating.

[0064] Afterwards, an electron transport layer ZnO is deposit...

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Abstract

The present invention provides a QLED device, comprising an anode and a cathode, and a laminate disposed between the anode and the cathode, the laminate comprising a laminated interface modification layer and an electronic functional layer, wherein the The interface modification layer is arranged between the electronic functional layer and the cathode, and the material of the interface modification layer is selected from fullerene lipid derivatives, fullerene alcohol derivatives, fullerene carboxylic acid derivatives At least one of compounds, fullerene phosphate derivatives, and fullerene cyano derivatives.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and have been widely used in light-emitting diodes, solar cells, and bioluminescent labels. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality nanomaterials, and their photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QLEDs) with quantum dots as the light-emitting layer have great potential for next-generation display and solid-state Lighting source. Quantum dot light-emitting diodes have received extensive attention and research in the fields of lighting and display in recent years due to their advantages such as high brightness, low power consumption, wide color gamut, and easy processing. After ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56H01L51/54
CPCH10K85/215H10K50/115H10K50/166H10K71/00
Inventor 刘佳曹蔚然
Owner SHENZHEN TCL IND RES INST