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A kind of polishing liquid and its preparation method and the processing method of silicon carbide crystal

A processing method and technology of silicon carbide, which is applied in the fields of polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low polishing efficiency, reduce the time of fine polishing, increase hardness, and avoid surface scratch effect

Active Publication Date: 2021-06-04
盘锦国瑞升科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The first object of the present invention is to provide a kind of polishing liquid, to solve the technical problem of low polishing efficiency existing in the prior art

Method used

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  • A kind of polishing liquid and its preparation method and the processing method of silicon carbide crystal
  • A kind of polishing liquid and its preparation method and the processing method of silicon carbide crystal
  • A kind of polishing liquid and its preparation method and the processing method of silicon carbide crystal

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Embodiment 1

[0076] The preparation method of the polishing liquid of the present embodiment comprises the steps:

[0077] (1) Take 50g of polycrystalline diamond powder with D50=0.125μm, 100g of inorganic bentonite, 35g of BYK-345, 50g of AFE-3168, and 10g of borax, add 5kg of pure water, and stir ultrasonically for 0.5h;

[0078] (2) Add 5 kg of silica sol with a solid content of 40% and a particle size of 70 nm to the material in step (1), and then ultrasonically stir for 0.5 h to obtain a polishing solution.

Embodiment 2

[0080] The preparation method of the polishing liquid of the present embodiment comprises the steps:

[0081] (1) Take 25g of polycrystalline diamond powder with D50=0.5μm, 45g of Silok7370W, 60g of BYK-W 9010, 20g of BYK-024, 10g of BYK-094 and 50g of methyl monoethanolamine, add 5kg of pure water, and ultrasonically stir for 0.5h ;

[0082] (2) Add 5 kg of silica sol with a solid content of 45% and a particle size of 80 nm to the material in step (1), and then ultrasonically stir for 0.5 h to obtain a polishing solution.

Embodiment 3

[0084] The preparation method of the polishing liquid of the present embodiment comprises the steps:

[0085] (1) Take 100g D50=0.25μm polycrystalline diamond powder, 30g BYK-431, 30g TRITON CF-10, 45g FOAMEX 825, and 20g of potassium hydroxide, add 5kg of pure water, after ultrasonic stirring for 0.5h;

[0086] (2) Add 5 kg of silica sol with a solid content of 50% and a particle size of 60 nm to the material in step (1), and then ultrasonically stir for 0.5 h to obtain a polishing solution.

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Abstract

The invention relates to the technical field of precision machining, in particular to a polishing liquid, a preparation method thereof, and a silicon carbide crystal processing method. The polishing liquid comprises the following components in parts by weight: 5-30 parts of polycrystalline diamond micropowder, 1000 parts of silica sol, 2-40 parts of suspending agent, 4-21 parts of wetting agent, 2-2 parts of defoamer 14 parts and pH regulator 2‑10 parts. The preparation method comprises: mixing polycrystalline diamond micropowder, suspending agent, wetting agent, defoaming agent and pH regulator into water, adding silica sol and mixing evenly. The polishing liquid can be used in the processing of silicon carbide crystals. The polishing liquid of the present invention cooperates with the polishing pad to polish silicon carbide, which can effectively reduce the fine polishing time and reduce the overall grinding and polishing time, and significantly improve the crystal surface quality.

Description

technical field [0001] The invention relates to the technical field of precision machining, in particular to a polishing liquid, a preparation method thereof, and a silicon carbide crystal processing method. Background technique [0002] Silicon carbide (SiC), as the third-generation wide-bandgap semiconductor material, is also the most mature third-generation semiconductor material. It has excellent thermal, mechanical, chemical and electrical properties. It is not only one of the best materials for making high-temperature, high-frequency, and high-power electronic devices, but also can be used as a substrate material for blue light-emitting diodes based on gallium nitride. It can be widely used in the fields of power electronics, microwave devices and LED optoelectronics. [0003] In terms of material performance, silicon carbide is very superior. Its forbidden band width is 3 times that of silicon, its saturated electron drift rate is 2 times higher than that of silicon,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02H01L21/02
CPCC09G1/02H01L21/02005
Inventor 苑亚斐张亮亮
Owner 盘锦国瑞升科技有限公司
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