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Preparation method of lead-based halogen perovskite film for high-energy ray detection

A high-energy ray and lead-based halogen technology, which is applied in sputtering coating, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem that the perovskite thick film has not achieved good success, crystals cannot grow in a large area, Perovskite thick film phase impurity and other problems, to achieve the effect of promoting purification and optimization of crystallinity, good uniformity, and large grains

Active Publication Date: 2019-07-16
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the conventional vacuum method mostly focuses on the preparation of thin films. When preparing thick perovskite films, serious component segregation problems often occur, resulting in impure phases of the obtained thick perovskite films. In addition, crystals cannot grow in large areas.
Therefore, the preparation of perovskite thick films by vacuum method has not achieved good success in the past research.

Method used

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  • Preparation method of lead-based halogen perovskite film for high-energy ray detection
  • Preparation method of lead-based halogen perovskite film for high-energy ray detection
  • Preparation method of lead-based halogen perovskite film for high-energy ray detection

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preparation example Construction

[0042] The preparation method of the inorganic perovskite thick film that is applicable to X-ray detection among the present invention, generally speaking its steps are as follows:

[0043] (1) using a method for preparing perovskite powder to prepare a large amount of pure-phase perovskite powder raw material;

[0044] (2) Take a certain mass of pure-phase perovskite powder, add a certain mass ratio of a certain component raw material powder therein, fully mix it uniformly, and use it as a gas phase source;

[0045] (3) pretreating the conductive substrate;

[0046] (4) Evenly distribute the uniformly mixed gas-phase source powder into several identical high-temperature-resistant quartz crucibles, place them in the high-temperature zone of the high-temperature-resistant quartz tube, and perform thermal evaporation; place the pretreated conductive substrate in the quartz tube The low temperature zone of the low temperature zone is used as the substrate for deposition, and the...

Embodiment example 1

[0051] In this example, CsPbBr 3 As a raw material, under optimal conditions, CsPbBr with a thickness of 10 μm was prepared by the following steps 3 Perovskite film:

[0052] (1) Prepare a large amount of CsPbBr 3 powder;

[0053] According to CsPbBr 3 The chemical composition, identified as CsPbBr 3 The component raw material is 1:1 PbBr 2 and CsBr. First weigh out PbBr with a molar ratio of 1:1 2 and CsBr powder, put them in the same mortar, mix and grind them; then pour the mixed powder into a high-temperature resistant quartz crucible, add a quartz cover (to prevent the component raw materials from being vaporized and escaped at high temperature), and place them into a small muffle In the furnace, seal it; raise the temperature of the muffle furnace to 350 ° C, and perform high-temperature sintering reaction on the powder; after 30 minutes, take out the crucible, pour the agglomerates in the crucible into the mortar, and after grinding again, pour the powder back in...

Embodiment example 2

[0063] This embodiment prepares CsPbBr with a thickness of 50 μm by the same method as in Example 1. 3 Thick film, the difference is:

[0064] Weigh out the pure phase CsPbBr of 10g in step (3) 3 powder and 0.5g of PbBr 2 Powder (mass ratio is 5%), it is mixed evenly.

[0065] In step (4), uniformly mixed raw material powders are evenly placed in 5 small quartz crucibles. After the constant temperature reaction time is extended to 40 minutes, the heating of the tube furnace is turned off, and after natural cooling, a CsPbBr with a thickness of about 50 μm is obtained. 3 thick film.

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Abstract

The invention discloses a preparation method of a lead-based halogen inorganic perovskite film for high-energy ray detection. According to the method, precursor raw materials are obtained through component regulation, the precursor raw materials are evenly mixed and then dispersed to serve as a plurality of evaporation sources, the proportions of all elements of the precursor raw materials in eachevaporation source keep unchanged, and thus vapor-phase transfer deposition preparation of the perovskite film is achieved through a homologous multi-branch co-evaporation method. An appropriate quantity of component raw materials are added in the deposition process of the vapor-phase transfer deposition method, and meanwhile the homologous multi-branch co-evaporation method is adopted, so that the inorganic perovskite thick film suitable for high-energy ray detection and other purposes can be prepared. Through the method, operation is simple, the prepared perovskite thick film has large thickness, large grains, good uniformity and good surface covering performance, and a semiconductor detector good in performance and excellent in stability can be manufactured.

Description

technical field [0001] The invention belongs to the technical field of preparing high-energy ray imaging detectors with semiconductor materials, and more specifically relates to a method for preparing a lead-based halogen perovskite film used for high-energy ray detection. The method specifically uses a vacuum method to prepare Halogen perovskite detector active layer thick film. Background technique [0002] Radiographic imaging technology uses high-energy radioactive rays (such as X-rays and γ-rays, etc.) The technical means are widely used in industries such as medical and health care, public safety and high-end manufacturing. Detectors are an important part of radiography equipment. Detectors used to detect radioactive rays generally include gas detectors, scintillation detectors, semiconductor detectors, etc., among which semiconductor detectors can obtain the best energy resolution. [0003] The semiconductor detector directly absorbs radioactive rays, and generates...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/06H01L31/0216H01L31/115H01L31/18
CPCC23C14/0694C23C14/24H01L31/02161H01L31/115H01L31/1876Y02P70/50
Inventor 牛广达张慕懿唐江李森邓贞宙
Owner HUAZHONG UNIV OF SCI & TECH
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