Semiconductor structure and forming method thereof

A semiconductor and annular groove technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of the sealing performance of the chip sealing ring needs to be improved, to prevent corrosion, avoid stress damage, improve The effect of protection
CN110034064AInactive Publication Date: 2019-07-19HUAIAN IMAGING DEVICE MFGR CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HUAIAN IMAGING DEVICE MFGR CORP
Publication Date
2019-07-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate comprises a device region and a sealing region surrounding the device region, and the semiconductor substrate has a first surface and a second surface opposite to the first surface; forming a sealing ringon the first surface of the semiconductor substrate in the sealing region, and forming a semiconductor device on the first surface of the semiconductor substrate in the device region; etching the second surface of the semiconductor substrate, forming a device region through hole penetrating through the thickness of the semiconductor substrate in the device region, and meanwhile forming an annulargroove penetrating through the thickness of the semiconductor substrate in the sealing region; and filling the device region through hole and the annular groove with conductive layers. The annular groove is formed and filled with the conductive layer, so that the stress damage of the outside to the device region in a chip can be avoided, the erosion of external moisture or corrosive gas can be prevented, and the capability of protecting the device in the chip can be improved.
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Description

Technical field

[0001] The present invention relates to the field of semiconductors, in particular to a semiconductor structure and a method of forming the same. Background technique

[0002] With the continuous development of integrated circuit manufacturing technology, people's requirements for integrated circuit integration and performance have become higher and higher. There is a chip sealing area between the scribe line of each chip on the wafer and the peripheral region of the integrated circuit, which is usually called a chip sealing ring. The chip sealing ring is made up of a dielectric layer and a metal layer. Stacked structure, and the metal layer utilizes dielectric holes passing through the dielectric layer for internal interconnection. When the wafer dicing process is performed along the scribe lane, the sealing ring of the chip can block the stress cracking between the dicing lane and the integrated circuit caused by the wafer dicing process; and the chip sealing r...

Claims

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