A method of manufacturing a grain boundary layer capacitor

Abstract

The invention provides a method for manufacturing a grain boundary layer capacitor, which adopts a three-step method to prepare the STO grain boundary layer capacitor. First, the STO green ceramic sheet is sintered in a reducing atmosphere to obtain a semiconducting substrate, and then an appropriate oxidant is selected to insulate the STO semiconducting substrate, and finally the resistance value of the STO grain boundary layer capacitor increases with the load voltage and pressurization time. Under the condition of loading voltage, rapid heat treatment is performed on the capacitance of the grain boundary layer to improve the insulation resistance value and consistency of the capacitor. The effect of this method is obvious, for SrTiO 3 The application of grain boundary layer capacitors in microwave integration technology, microwave circuits and microwave communications is of great significance.

Description

technical field [0001] The invention relates to the technical field of semiconductors and electronic functional materials, and particularly designs a method for manufacturing a grain boundary layer capacitor. Background technique [0002] Grain boundary layer capacitors have the advantages of small size, large dielectric constant, wide application temperature range (-55℃~125℃), high capacitance temperature stability (≤±4.0%~≤±25%) and good frequency stability characteristics. It is widely used in microwave circuits and microwave communications. Single-layer chip grain boundary layer capacitors generally use SrTiO 3 (STO) or electron-doped STO is used as the parent phase, which is made by one-step or two-step method. The one-step method is that the semiconducting and insulating of STO are completed in the same sintering. The two-step method is to first sinter STO in a reducing N2 / H2 mixed atmosphere at a high temperature above 1300 ° C to form a semiconductive ceramic shee...

AI Technical Summary

Problems solved by technology

Theoretically, the thicker the space charge layer at the grain boundary, the greater the resistance value of the grain boundary layer capacitor, but at the same time, due to the increase in the thickness of the space charge region, the capacitance of the capacitor will decrease rapidly, so in practice, the capacitance of the capacitor is often sacrificed value to obtain high resistance and voltage increase, but doing so may outweigh the gain in practical applications

On the other hand, acceptor ions and glass substances (insulating substances) in the grain boundary layer enter the grain boundary through thermal diffusion, but this process is extremely difficult to control precisely in technology, so in actual products, the resistance value of the capacitor is often different. Large, poor consistency, affecting the stability of product use

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