Large-size silicon carbide wafer diamond wire cutting machine tool

Abstract

The invention discloses a large-size silicon carbide wafer diamond wire cutting machine tool. The large-size silicon carbide wafer diamond wire cutting machine tool comprises a base (1) and a portal-shaped upright post (12) provided with a guide wire assembly. The large-size silicon carbide wafer diamond wire cutting machine tool is characterized in that a wire conveying component (2) is respectively mounted on the base (1) on two sides of the portal-shaped upright post (12); a sliding block is mounted on a guide rail and driven by a servo motor to achieve stepping wire releasing or wire collecting; the center of the base (1) is provided with a Y-direction herringbone upright post (3); the Y-direction herringbone upright post (3) is driven by a Y-direction driving mechanism (4) to move forwards and backwards; a Z-direction sliding plate is installed on the Y-direction herringbone upright post (3); the Z-direction sliding plate is driven to move up and down by a Z-direction driving mechanism (5) installed on the upper part of the Y-direction herringbone upright post (3); a workpiece clamping mechanism (7) is installed on a C-axis driving mechanism (6); and the C-axis driving mechanism (6) drives a workpiece to be machined on the workpiece clamping mechanism (7) to rotate or swing. The large-size silicon carbide wafer diamond wire cutting machine tool has simple structure, convenient manufacture, stable and reliable machining quality and high efficiency.

Description

technical field [0001] The invention relates to a wire-cutting machine tool, in particular to a wire-cutting machine tool with a long wire changing period, in particular to a large-size silicon carbide wafer diamond wire-cutting machine tool. Background technique [0002] Silicon carbide is a polymorphic compound. At a high temperature of 560 degrees Celsius, silicon carbide wafers can still work without cooling devices, and have irreplaceable advantages in extreme environments such as aerospace, military industry, and nuclear energy. [0003] Silicon carbide wafer is a third-generation semiconductor material, which has the advantages of large band gap, high critical breakdown field strength, and high thermal conductivity. It is an ideal material for making high-voltage and high-power semiconductor devices. High-quality and large-diameter silicon carbide single crystal is extremely important, but wafer processing plays a decisive role in the surface quality of the wafer. Am...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to design a large-size silicon carbide wafer diamond wire-cutting machine tool with stable cutting and long wi

Images