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High-purity carbon fiber reinforced silicon carbide composite material and preparation method thereof

A technology of composite materials and silicon carbide, which is applied in the field of high-purity carbon fiber reinforced silicon carbide composite materials and its preparation, can solve the problems of long preparation period, high preparation cost, and many times of impregnation, and achieve improved mechanical compatibility and preparation cycle. Effect of shortening and reducing production cost

Active Publication Date: 2019-08-09
湖南兴晟新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this method, SiC powder has a large amount of dust when it is introduced, and it is easy to leak from the fiber body, and the amount of powder introduced is limited; the number of times of PIP impregnation is large, especially the subsequent densification speed is very slow, and it does not fundamentally solve the problem of C f / SiC ceramic matrix composite material has long preparation period and high preparation cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Purification of carbon fiber felt and carbon fiber cloth. Choose high-purity and easy-to-purify carbon fiber felt and carbon fiber cloth, and vacuum process at a high temperature of 2000°C. The harmful impurities of high-purity carbon fiber felt and carbon fiber cloth are less than 10ppm.

[0036] (2) Preparation of CVD PyC and CVD SiC multilayer coatings on the surface of carbon fibers. PyC and SiC multilayer composite coatings were prepared by CVD (chemical vapor deposition) on the surface of high-purity carbon fiber felt / cloth. Among them, the silicon source gas raw material for CVD to prepare SiC coating is MTS (monomethyltrichlorosilane), hydrogen is the catalyst and carrier gas, argon is the dilution gas, the gas raw material for CVD pyrolysis carbon is propane, argon and hydrogen are Dilute gas, the deposition temperature is 1100°C, the deposition pressure is 1.0kPa, the deposition time is 60min each time, the single-layer coating thickness is 200nm, the tw...

Embodiment 2

[0042] (1) Purification of carbon fiber felt and carbon fiber cloth. Choose high-purity and easy-to-purify carbon fiber felt and carbon fiber cloth, and vacuum process at a high temperature of 2000°C. The harmful impurities of high-purity carbon fiber felt and carbon fiber cloth are less than 10ppm.

[0043] (2) Preparation of CVD PyC and CVD SiC multilayer coatings on the surface of carbon fibers. PyC and SiC multilayer composite coatings were prepared by CVD (chemical vapor deposition) on the surface of high-purity carbon fiber felt / cloth. Among them, the silicon source gas raw material for CVD to prepare SiC coating is MTS (monomethyltrichlorosilane), hydrogen is the catalyst and carrier gas, argon is the dilution gas, the gas raw material for CVD pyrolysis carbon is propane, argon and hydrogen are Dilute gas, the deposition temperature is 1150°C, the deposition pressure is 5kPa, the deposition time is 30min each time, the single-layer coating thickness is 200nm, the two ...

Embodiment 3

[0049] (1) Purification of carbon fiber felt and carbon fiber cloth. Choose high-purity and easy-to-purify carbon fiber felt and carbon fiber cloth, and vacuum process at a high temperature of 2000°C. The harmful impurities of high-purity carbon fiber felt and carbon fiber cloth are less than 10ppm.

[0050] (2) Preparation of CVD PyC and CVD SiC multilayer coatings on the surface of carbon fibers. PyC and SiC multilayer composite coatings were prepared by CVD (chemical vapor deposition) on the surface of high-purity carbon fiber felt / cloth. Among them, the silicon source gas raw material for CVD to prepare SiC coating is MTS (monomethyltrichlorosilane), hydrogen is the catalyst and carrier gas, argon is the dilution gas, the gas raw material for CVD pyrolysis carbon is propane, argon and hydrogen are Dilute gas, the deposition temperature is 1150°C, the deposition pressure is 5kPa, the deposition time is 60min each time, the single-layer coating thickness is 400nm, the two ...

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Abstract

The invention provides a high-purity carbon fiber reinforced silicon carbide composite material and a preparation method thereof and belongs to high-temperature high-purity composite materials and advanced manufacturing technologies thereof. The composite material can be applied to the fields of semiconductor, solar energy, optoelectronics, machinery, metallurgy, chemical industry, materials and the like. The preparation method comprises the steps that carbon fiber felt and a carbon fiber cloth are subjected to purification treatment first, pyrolysis of carbon and SiC interface phase deposition are alternately carried out on the surfaces of the carbon fiber felt and carbon fiber cloth, and then prepared high-purity ceramic slurry is sprayed onto the surface of the carbon fiber felt or carbon fiber cloth containing a composite coating by means of a spraying method; stacking, needling, drying and solidifying are carried out to obtain a composite material blank, and the blank is subjectedto high-temperature carbonization treatment, purification treatment and densification treatment to obtain the high-purity carbon fiber reinforced silicon carbide composite material. The preparation method shortens the preparation cycle and reduces the production cost; the composite material prepared by means of the preparation method has the impurity content lower than 10 ppm, the density higherthan 2.20 g / cm<3> and the bending strength higher than 150 MPa.

Description

technical field [0001] The invention belongs to the technical field of high-temperature high-purity composite materials and their advanced manufacturing, and in particular relates to a high-purity carbon fiber reinforced silicon carbide composite material and a preparation method thereof. Background technique [0002] High-purity materials such as single crystal Si, polycrystalline Si, single crystal SiC, GaN, and diamond are the main raw materials for semiconductors, LEDs, and solar energy, and their purity is a key indicator, usually reaching optical or electronic grades. During the smelting and manufacturing process of these high-purity materials, high-temperature-resistant high-purity material containers (crucibles, cover plates, etc.), thermal structural parts (high-temperature support parts, fixing parts, etc.) Plates, heat shields, insulation materials, etc.), in order to ensure the high purity of the prepared materials; for the manufacture of MOCVD epitaxial chips an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/565C04B35/628C04B35/622
CPCC04B35/806C04B35/565C04B35/622C04B35/62863C04B35/62873C04B35/62894C04B2235/425C04B2235/48C04B2235/5248C04B2235/5256C04B2235/616C04B2235/77C04B2235/96
Inventor 不公告发明人
Owner 湖南兴晟新材料科技有限公司
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