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High-purity carbon fiber reinforced silicon carbide composite material and preparation method thereof

A technology of composite materials and silicon carbide, which is applied in the field of high-purity carbon fiber reinforced silicon carbide composite materials and its preparation, can solve the problems of high preparation cost, long preparation cycle, and many times of impregnation, and achieve good mechanical properties and thermal properties. Mechanical compatibility, the effect of reducing production costs

Active Publication Date: 2021-07-27
湖南兴晟新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this method, SiC powder has a large amount of dust when it is introduced, and it is easy to leak from the fiber body, and the amount of powder introduced is limited; the number of times of PIP impregnation is large, especially the subsequent densification speed is very slow, and it does not fundamentally solve the problem of C f / SiC ceramic matrix composite material has long preparation period and high preparation cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Purification of carbon fiber felt and carbon fiber cloth. Select high-purity and easy-to-purify carbon fiber felt and carbon fiber cloth, and vacuum treatment at a high temperature of 2000 ° C. The harmful impurities of high-purity carbon fiber felt and carbon fiber cloth are less than 10ppm.

[0036] (2) Preparation of CVD PyC and CVD SiC multilayer coatings on carbon fiber surfaces. PyC and SiC multilayer composite coatings were prepared on the surface of high-purity carbon fiber felt / cloth by CVD (chemical vapor deposition). Wherein, the silicon source gas raw material for preparing SiC coating by CVD is MTS (monomethyltrichlorosilane), hydrogen gas is catalyst and carrier gas, argon gas is diluent gas, the gas raw material of CVD pyrolysis carbon is propane, and argon gas and hydrogen gas are Dilute gas, the deposition temperature is 1100°C, the deposition pressure is 1.0kPa, the deposition time is 60min each time, the thickness of the single-layer coating is ...

Embodiment 2

[0042] (1) Purification of carbon fiber felt and carbon fiber cloth. Select high-purity and easy-to-purify carbon fiber felt and carbon fiber cloth, and vacuum treatment at a high temperature of 2000 ° C. The harmful impurities of high-purity carbon fiber felt and carbon fiber cloth are less than 10ppm.

[0043] (2) Preparation of CVD PyC and CVD SiC multilayer coatings on carbon fiber surfaces. PyC and SiC multilayer composite coatings were prepared on the surface of high-purity carbon fiber felt / cloth by CVD (chemical vapor deposition). Wherein, the silicon source gas raw material for preparing SiC coating by CVD is MTS (monomethyltrichlorosilane), hydrogen is used as catalyst and carrier gas, argon is diluent gas, the gas raw material of CVD pyrolysis carbon is propane, and argon and hydrogen are Dilute gas, the deposition temperature is 1150°C, the deposition pressure is 5kPa, the deposition time is 30min each time, the thickness of the single layer coating is 200nm, the...

Embodiment 3

[0049] (1) Purification of carbon fiber felt and carbon fiber cloth. Select high-purity and easy-to-purify carbon fiber felt and carbon fiber cloth, and vacuum treatment at a high temperature of 2000 ° C. The harmful impurities of high-purity carbon fiber felt and carbon fiber cloth are less than 10ppm.

[0050] (2) Preparation of CVD PyC and CVD SiC multilayer coatings on carbon fiber surfaces. PyC and SiC multilayer composite coatings were prepared on the surface of high-purity carbon fiber felt / cloth by CVD (chemical vapor deposition). Wherein, the silicon source gas raw material for preparing SiC coating by CVD is MTS (monomethyltrichlorosilane), hydrogen is used as catalyst and carrier gas, argon is diluent gas, the gas raw material of CVD pyrolysis carbon is propane, and argon and hydrogen are Dilute gas, the deposition temperature is 1150°C, the deposition pressure is 5kPa, the deposition time is 60min each time, the thickness of the single-layer coating is 400nm, the...

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Abstract

The invention provides a high-purity carbon fiber reinforced silicon carbide composite material and a preparation method thereof, belonging to the high-temperature high-purity composite material and its advanced manufacturing technology, and can be applied to the fields of semiconductor, solar energy, optoelectronics, machinery, metallurgy, chemical industry, and materials. The preparation method includes: firstly purifying carbon fiber felt and carbon fiber cloth, then alternately depositing pyrolytic carbon and SiC interface on their surfaces, and then spraying the prepared high-purity ceramic slurry on the carbon fiber containing composite coating by spraying method The surface of the felt or carbon fiber cloth is then stacked, needled, dried and cured to obtain a composite material green body, and then the green body is subjected to high-temperature carbonization treatment, purification treatment and densification treatment to obtain a high-purity carbon fiber reinforced silicon carbide composite material. . The above method shortens the preparation period and reduces the production cost; the impurity content of the composite material prepared by the above method is less than 10ppm, and the density is greater than 2.20g / cm 3 , the bending strength is greater than 150MPa.

Description

technical field [0001] The invention belongs to the high-temperature and high-purity composite material and the technical field of advanced manufacturing thereof, and particularly relates to a high-purity carbon fiber reinforced silicon carbide composite material and a preparation method thereof. Background technique [0002] High-purity materials such as single-crystal Si, polycrystalline Si, single-crystal SiC, GaN, and diamond are the main raw materials for semiconductors, LEDs, and solar energy, and their purity is a key indicator, usually reaching optical or electronic levels. In the smelting and manufacturing process of these high-purity materials, containers (crucibles, cover plates, etc.), thermal structural parts (high-temperature supports, fixing parts, etc.) and thermal field materials (conductors, separators, etc.) of high-temperature resistant and high-purity materials must be used. Plates, heat shields, thermal insulation materials, etc.) can ensure the high pu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/80C04B35/565C04B35/628C04B35/622
CPCC04B35/806C04B35/565C04B35/622C04B35/62863C04B35/62873C04B35/62894C04B2235/425C04B2235/48C04B2235/5248C04B2235/5256C04B2235/616C04B2235/77C04B2235/96
Inventor 不公告发明人
Owner 湖南兴晟新材料科技有限公司
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