Barrier type CIGS solar cell and preparation method thereof

A technology of solar cells and surface electrodes, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of CIGS failure and poor water vapor barrier performance, and achieve the effects of improving work stability, prolonging service life, and improving water vapor barrier properties

Active Publication Date: 2019-08-09
SUNFLARE NANJING ENERGY TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above analysis, the present invention aims to provide a barrier type CIGS solar cell and its preparation method to solve the problem that the poor water vapor barrier performance of ITO in the prior art can easily cause CIGS failure

Method used

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  • Barrier type CIGS solar cell and preparation method thereof
  • Barrier type CIGS solar cell and preparation method thereof
  • Barrier type CIGS solar cell and preparation method thereof

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Embodiment 1

[0045] This embodiment provides a barrier type CIGS solar cell, see Figure 1 to Figure 8 , including a substrate 1 and a back electrode layer 2, a first absorption layer 3, a buffer layer 4 and a transparent surface electrode layer 5 laminated on the substrate 1 in sequence, wherein the transparent surface electrode layer 5 is made of indium zinc tin oxide (IZTO) .

[0046]Compared with the prior art, the barrier type CIGS solar cell provided in this embodiment adopts IZTO to replace the common material ITO of the transparent surface electrode layer 5. Since the structure density of IZTO is better than that of ITO, and the water vapor barrier performance of IZTO is higher than that of ITO, therefore , the transparent surface electrode layer 5 made of IZTO can better protect the moisture-sensitive buffer layer 4 and the first absorber layer 3, thereby improving the working stability of the above-mentioned barrier type CIGS solar cell.

[0047] Considering that the light trans...

Embodiment 2

[0071] This embodiment provides a method for preparing a barrier type CIGS solar cell, comprising the following steps:

[0072] Step 1: sequentially forming a back electrode layer, a first absorption layer and a buffer layer on the substrate;

[0073] Step 2: forming a first surface electrode layer and a second surface electrode layer on the surface of the buffer layer;

[0074] The first surface electrode layer is prepared by the following method: a layer of ITO layer is formed by a sputtering process, a plurality of IZTO accommodation grooves distributed in a matrix are formed on the ITO layer by an etching process, and a plurality of IZTO accommodation grooves are formed by a sputtering process. The first IZTO region is formed in the center, and the unetched part of the ITO layer is the first ITO region.

[0075] The second surface electrode layer is prepared by the following method: a layer of IZTO layer is formed by sputtering process, a plurality of ITO accommodation gr...

Embodiment 3

[0096]This embodiment provides a packaging structure for thin-film solar cells, which is rectangular and includes a protective film, a structural film and a back film pressed from top to bottom, and a CIGS solar cell is located between the structural film and the back film; usually In some cases, in order to facilitate processing, CIGS solar cells are generally made into rectangles, and the core object of packaging is CIGS solar cells, so the packaging structure is rectangular. The size of the structural film is the same as that of the CIGS solar cell; the area of ​​the back film is larger than that of the CIGS solar cell; the protective film includes a main body and an edge, the main body is the same size as the CIGS solar cell, and the edges are arranged on the four sides of the main body and integrated with the main body. The edge seal tightly covers the structural film and the sides of the CIGS solar cell and is pressed against the back film. In the packaging structure, th...

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Abstract

The invention discloses a barrier type CIGS solar cell and a preparation method thereof, which belong to the technical field of CIGS solar cell film materials. The problem of CIGS failure caused by poor water vapor barrier performance of ITO in the prior art is solved. The barrier type CIGS solar cell provided by the invention comprises a substrate, a back electrode layer, a first absorption layer, a buffer layer and a transparent surface electrode layer, wherein the back electrode layer, the first absorption layer, the buffer layer and the transparent surface electrode layer are sequentiallylaminated on the substrate. The transparent surface electrode layer is made of IZTO. The preparation method provided by the invention comprises the steps that the back electrode layer, the first absorption layer and the buffer layer are sequentially formed on the substrate; and a first surface electrode layer and a second surface electrode layer are formed on the surface of the buffer layer. The barrier type CIGS solar cell and the preparation method thereof can be used for solar power generation.

Description

technical field [0001] The invention relates to energy saving and environmental protection, and clean energy technology, in particular to a CIGS solar cell film material technology, in particular to a barrier type CIGS solar cell and a preparation method thereof. Background technique [0002] The energy crisis and environmental pollution are major challenges facing mankind. The development of new energy and renewable clean energy is an important means to effectively solve the energy crisis and environmental pollution, and it has become one of the fastest growing emerging industries in the world. Solar energy is an inexhaustible and inexhaustible renewable clean energy. CIGS solar cell is a kind of solar cell mainly made of Cu (copper), In (indium), Ga (gallium), Se (selenium), etc. The multi-layer film structure can effectively use solar energy to generate electricity. It has the advantages of strong light absorption capacity, good power generation stability, high conversion...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/032H01L31/048H01L31/18
CPCH01L31/02167H01L31/022466H01L31/0322H01L31/048H01L31/1876Y02E10/541Y02P70/50
Inventor 张准王磊
Owner SUNFLARE NANJING ENERGY TECH LTD
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