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Preparation method of large-area perovskite solar cell

A solar cell and perovskite technology, applied in the field of solar photovoltaic, can solve the problems of excess PbI residue, high film roughness, easy formation of holes, etc., and achieves the effect of simple and feasible preparation method, uniform and flat film layer, and reduced residue.

Inactive Publication Date: 2019-08-09
北京宏泰创新科技有限公司
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Problems solved by technology

[0006] Aiming at the above-mentioned problems in the prior art, the present invention aims to provide a simple and effective scraping-spraying combined method to prepare perovskite solar cells, which solves the problem of simply spraying electron transport layer and hole transport in the prior art. The roughness of the film layer caused by the layer is high, and it is easy to form holes, causing the problem of short circuit of the battery, and the presence of PbI in the preparation of the perovskite layer by simply scraping 2 The problem of excess residue, and can be applied to the preparation of large-area perovskite solar cells, the prepared film layers are flat and uniform, which improves the efficiency of large-area perovskite solar cells

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preparation example Construction

[0027] The preparation steps of the perovskite absorbing layer are: spraying PbI on the electron transport layer or the hole transport layer 2 solution to obtain a lead iodide thin film layer; scraping the mixed solution of FAI / MACl / MABr on the lead iodide thin film layer to obtain a perovskite absorption layer.

[0028] Among them, the perovskite absorbing layer is first sprayed with lead iodide (PbI 2 ) solution, annealed to form PbI 2 thin film layer; then in PbI 2 A mixed solution of FAI / MACl / MABr (formamidine ion (FA) and methylammonium ion (MA)) is scraped on the film layer and annealed to obtain a perovskite layer. Preparation of PbI by spraying method 2 The thin film layer can make it have higher roughness, and when scraping the FAI / MACl / MABr mixed solution, it can ensure that the solution is fully immersed, making the reaction more complete and reducing PbI 2 residues, thereby reducing the adverse effect on the perovskite layer; the film layer prepared by this met...

Embodiment 1

[0040] like figure 1 In the formal structure of the perovskite solar cell shown, a transparent conductive layer, an electron transport layer, a perovskite absorbing layer, a hole transport layer and a back electrode layer are sequentially arranged, and the specific preparation method is as follows:

[0041] 1) Scrape-coat SnO on the 25cm×25cm ITO transparent conductive layer 2 , annealed at 150°C to obtain an electron transport layer with a thickness of 20nm;

[0042] 2) The perovskite absorbing layer was prepared by scraping and spraying on the electron transport layer: the spraying concentration on the electron transport layer was 1.15mol / LPbI 2 DMF solution, annealed at 150°C to obtain PbI with a thickness of 150nm 2 Thin film layer; in PbI 2 Add the FAI / MACl / MABr mixed solution dropwise on the film layer, scrape the mixed solution, and anneal at 150°C to obtain a perovskite layer with a thickness of 300nm;

[0043] 3) Scrape-coat Spiro-OMeTAD on the prepared perovskite...

Embodiment 2

[0046] like figure 1 In the formal structure of the perovskite solar cell shown, a transparent conductive layer, an electron transport layer, a perovskite absorbing layer, a hole transport layer and a back electrode layer are sequentially arranged, and the specific preparation method is as follows:

[0047] 1) Scrape-coat SnO on the 25cm×25cm ITO transparent conductive layer 2 , annealed at 150°C to obtain an electron transport layer with a thickness of 30nm;

[0048] 2) The perovskite absorbing layer was prepared by scraping and spraying on the electron transport layer: the spraying concentration on the electron transport layer was 1.3mol / LPbI 2 DMF solution, annealed at 150°C to obtain PbI with a thickness of 200nm 2 Thin film layer; in PbI 2 Add the FAI / MACl / MABr mixed solution dropwise on the film layer, scrape the mixed solution, and anneal at 150°C to obtain a perovskite layer with a thickness of 350nm;

[0049] 3) Scrape-coat Spiro-OMeTAD on the prepared perovskite ...

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Abstract

The invention provides a preparation method of a large-area perovskite solar cell. The preparation method concretely comprises the steps: preparing an electron transmission layer and a hole transmission layer by a scraping coating method and preparing a perovskite absorption layer by a spraying and scraping coating method. The electron transmission layer and the hole transmission layer are prepared by the scraping coating method, which can ensure the good film quality, provide the basic platform for the perovskite layer and realize good combination between the perovskite absorption layer and the electron transmission layer and between the perovskite absorption layer and the hole transmission layer. The perovskite layer prepared by the spraying and scraping coating method is uniform and flat and the surface defects are greatly reduced, which has a high gain effect on improving the efficiency of the perovskite solar cell. The preparation method of scraping coating and spraying is simpleand feasible and the requirement for the equipment is low so that the method can be applied to preparation of the large-area perovskite solar cell; and the material can be fully utilized, the cost canbe saved to the greatest extent and the green production can be realized.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a method for preparing a large-area perovskite solar cell. Background technique [0002] Perovskite solar cells are solar cells with organic-metal halides with a perovskite structure as the core light absorption, photoelectric conversion, and photogenerated carrier transport materials, which have high photoelectric conversion efficiency, low cost, and simple preparation. The outstanding advantages have become the research hotspot of solar cells at present. [0003] Perovskite solar cells are generally composed of a transparent conductive layer, an electron transport layer, a perovskite absorbing layer, a hole transport layer and a back electrode layer. The preparation methods mainly include liquid phase method, gas phase method, gas phase assisted liquid phase method and spin coating method. In actual research, the preparation process of liquid phase method, gas pha...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/10H10K30/80Y02E10/549Y02P70/50
Inventor 陈浩唐泽国张倩
Owner 北京宏泰创新科技有限公司
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