51 results about "Methylammonium ion" patented technology

Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

A film comprising a crystalline halide perovskite composition having the following formula:AMX3   (1)wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

Sulfonate salts have the formula: R1COOCH2CH2CF2CF2SO3−M+ wherein R1 is alkyl, aryl or hetero-aryl, M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

The invention relates to nano polishing solution for chemically mechanical polishing of vanadium oxide, which consists of a nano-abrasive, a pH regulator, a surfactant, a defoaming agent, a bactericide, a cleaning aid and a solvent, wherein the nano-abrasive is zirconium oxide, titanium oxide, plutonium oxide or silica; the pH regulator comprises inorganic base of KOH and organic base of tetramethylammonium, tetraethyl ammonium hydroxide or hydroxy amine; the surfactant is silicane polyethylene glycol ether, polyethylene glycol ether or 2-(2-dodecyloxyethoxy)ethanol; the defoaming agent is poly(dimethylsilane); the bactericide is isomerous thiazolidinone; the cleaning aid is isopropanol; and the solvent is deionized water. The invention has the advantages that: the polishing rate is stably controllable, the damage is low, the cleaning is simple, equipment is not corroded, the environment is not polluted, and the storage time is long; and a vanadium oxide film material is subjected to the chemically mechanical polishing by the nano polishing solution for preparing a resistive random access memory, and the method is simple and practicable, and is completely compatible with an integrated circuit process.

Sulfonate salts have the formula:R1SO3—CH(Rf)—CF2SO3−M+wherein R1 is alkyl or aryl, Rf is H or trifluoromethyl, and M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

The invention discloses a method for enhancing the high temperature resistance and low temperature resistance of an aluminum electrolytic capacitor, which includes the preparation of an electrolyte, and the electrolyte includes the following raw materials in parts by weight: main solvent: 48-80%; auxiliary solvent: 10-32%, solute : 15-30%, additives: 0.3-3.2%, wherein, the solvent composed of the main solvent and the auxiliary solvent is a liquid with low saturated vapor pressure; the solute is tetramethylammonium maleate, ammonium adipate, triethylamine, One or more of 1,2-dimethylimidazolium phosphoric acid and phosphorous acid. Due to the selection of solvents with low saturated vapor pressure, the ratio of solutes is increased to ensure that the electrolyte does not condense at low temperature and the solutes do not precipitate; adding hydrogen absorbing agents and water suppressing agents reduces the internal pressure of the product; adding inhibitors and low leakage agents, The occurrence of high-temperature characteristic defects such as too fast recovery of electric leakage is prevented; the invention can also effectively ensure the low-temperature stability of the electrolyte, and provide guarantee for the stable operation of the LED driving power supply.

The invention is an electrochemical capacitor with its electrodes made on a conducting substrate with a layer of a redox polymer of the poly[Me(R-Salen)] type deposited onto the substrate. Me is a transition metal (for example, Ni, Pd, Co, Cu, Fe), R is an electron-donating substituent (for example, CH3O—, C2H5O—, HO—, —CH3), Salen is a residue of bis(salicylaldehyde)-ethylendiamine in Schiff's base. The electrolyte comprises of an organic solvent, compounds capable of dissolving in such solvents with the resulting concentration of no less than 0.01 mol / l and dissociating with the formation of ions, which are electrochemically inactive within the range of potentials from −3.0 V to +1.5 V (for example, salts of tetramethyl ammonium, tetrapropyl ammonium, tetrabutyl ammonium), and a dissolved metal complex [Me(R-Salen)]. The method of using the capacitor contemplates periodically alternating the connection polarity of the electrodes, causing the electrochemical characteristics of the electrodes to regenerate.

Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.

The invention relates to a process for producing silicon rubber by using waste silicon rubber materials, which comprises the following steps: preparing dimethylsilane by using the waste silicon rubbermaterials through splitting, base-catalysed rearrangement, and discoloration and filtration of active carbon; and then placing the dimethylsilane, end-capping agent and tetramethylammonium hydroxideinto a kettle to prepare the silicon rubber. The process for producing silicon rubber by using waste silicon rubber materials comprises two additional process flows: 1) refining silicon dioxide from chemical waste residues generated in the process of preparing the silicon dioxide; and 2) finely preparing baking-free bricks by further utilizing the waste residues generated in the process of preparing the silicon dioxide, and adding coal ash, quartz sands, cement and rock sands into the waste residues. The process for producing silicon rubber by using waste silicon rubber materials prepares thesilicon dioxide and the baking-free bricks by using the waste silicon rubber materials, thereby having environmental protection value.

The present invention provides an ionic liquid or plastic crystal comprising anions and cations, said anions including [C(SO2F)3]- and said cations including at least one type selected from the group consisting of 1-ethyl-3-methylimidazolium ([EMI]+), N,N-diethyl-N-methyl-(2-methoxyethyl ) ammonium ([DEME]+), N-methyl-N-propylpyrrolidinium ([Py13]+), N-methyl-N-propylpiperidinium ([PP13]+), tetramethylammonium ([N1111]+), tetraethylammonium ([N2222]+), triimethyl hexyl ammonium ([N6111]+), triethylhexylammonium ([N6222]+), N-methyl-N-ethylpyrrolidinium ([Py12]+), 1-butyl-3-methylimidazolium ([C4mim]+), and 1-hexyl-3-methylimidazolium ([C6mim]+).

In a dye-sensitized photovoltaic device including a semiconductor fine particle layer 2 on which a sensitizing dye is adsorbed, a counter electrode 3, and an electrolyte layer 4 between the electrodes, a molecule having a plurality of acid functional groups for adsorption onto the semiconductor electrode is used as a molecule of the sensitizing dye, and part of the acid functional groups is neutralized with an alkaline compound which is a hydroxide of at least one metal or compound selected from the group consisting of Li, Na, K, tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, an imidazolium compound, and a pyridinium compound. In this manner, a dye-sensitized photovoltaic device that can achieve high photoelectric conversion efficiency even in the cases where a dye containing readily aggregating acid functional groups, such as carboxylic acid, as the adsorbing groups is used. A method for making the device is also provided.

A film comprising a crystalline halide perovskite composition having the following formula:AMX3  (1)wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.

Quaternary boron salts are used as initiators of polymerisation in adhesive compositions for bonding low surface energy substrates such as polyolefins. The quaternary boron salts are of the formula Iwherein R1 is C1–C10 alkyl,R2, R3 and R4, which may be the same or different, are, C1–C10 alkyl or C3–C10 cycloalkyl, phenyl, or phenyl-substituted C1–C10 alkyl or C3–C10 cycloalkyl, provided that any two of R1–R4 may optionally be part of a carbocyclic ring, andM+ is a metal ion or a quaternary ammonium ion.Particular examples of initiator compounds include sodium tetraethyl borate and lithium tetraethyl borate, lithium phenyl triethyl borate and tetramethylammonium phenyl triethyl borate.

Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.