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Method for preparing ultrathin crystalline silicon double-sided solar cell

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve problems such as poor uniformity of product diffusion junctions, difficulty in industrialization, and high damage rate of thin silicon wafers, to increase the duration of light stay, reduce the breakage rate, and improve light The effect of availability

Active Publication Date: 2019-05-24
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing ultra-thin crystalline silicon double-sided solar cells with simple process, which can effectively reduce the product damage rate and improve product quality, so as to solve the problem of high damage rate, high cost and technical problems of existing thin silicon wafers. Complexity, poor uniformity of product diffusion junction and difficulty in industrialization

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  • Method for preparing ultrathin crystalline silicon double-sided solar cell
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  • Method for preparing ultrathin crystalline silicon double-sided solar cell

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Embodiment 1

[0036] like figure 1 As shown, the preparation method of the ultra-thin crystalline silicon double-sided solar cell provided by the present embodiment is as follows: thinning and texturing - ceramic roll diffusion to make PN junction - line wet etching - dephosphorization silicon glass - growth functional layer - Double-sided deposition of silicon nitride antireflection layer - screen printing, sintering finger electrodes.

[0037] figure 1 Only the key steps in the present invention are shown, and some conventional processes such as cleaning are not listed here. The cleaning process includes cleaning before texturing and cleaning after texturing, etc. Before texturing, ultrasonic cleaning with acetone and alcohol is generally used to remove organic and inorganic impurities on the surface of polysilicon substrates, and then cleaned with deionized water; Rinse with deionized water and blow dry with nitrogen. These conventional processes will not be introduced too much in the...

Embodiment 2

[0046] Thinning and texturing: place a 200μm thick P-type polysilicon substrate in HF, H 2 O 2 , in the mixed solution of silver nitrate and copper nitrate, the mass fraction of HF is 35%, H 2 O 2 The mass fraction of 35%, the molar concentrations of silver nitrate and copper nitrate are 0.5mol / L and 0.3mol / L respectively, HF, H 2 O 2 The volume ratio of the additives (the additives here are silver nitrate and copper nitrate) is 3:2.5:1. Make polysilicon substrates in HF, H 2 O 2 The polysilicon substrate was thinned to 100 μm by soaking in a mixed solution of , silver nitrate and copper nitrate for 2200s at 25°C, and the surface of the polysilicon substrate was made into a textured structure.

[0047] Ceramic roll diffusion to make PN junction: prepare 4% phosphoric acid solution, and carry out ultrasonic atomization deposition on the thinned polysilicon substrate at 20 ℃ (ultrasonic frequency is 1.8MHz, atomization rate is 2mL / min, and the median fog particle is 4.0μm...

Embodiment 3

[0054] Thinning and texturing: place a 220μm thick P-type polysilicon substrate in HF, H 2 O 2 In the mixed solution with palladium nitrate, the mass fraction of HF is 30%, H 2 O 2 The mass fraction of 38%, the molar concentration of palladium nitrate is 1.2mol / L, HF, H 2 O 2 The volume ratio of palladium nitrate and palladium nitrate is 4.5:2:1. Make polysilicon substrates in HF, H 2 O 2 The polycrystalline silicon substrate is thinned to 110 μm by soaking in a mixed solution of palladium nitrate and 23° C. for 2000 s, and the surface of the polycrystalline silicon substrate is made into a textured structure.

[0055]Ceramic roll diffusion to make PN junction: prepare 6% phosphoric acid solution, and carry out ultrasonic atomization deposition on the thinned polysilicon substrate at 22°C (ultrasonic frequency is 1.75MHz, atomization rate is 3mL / min, and the median fog particle is The diameter of 3.8μm); then the polysilicon substrate is placed on the ceramic roller, he...

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Abstract

The invention provides a method for preparing ultrathin crystalline silicon double-sided solar cell. The method comprises steps of: firstly thinning a polycrystalline silicon substrate to 90-120[mu]mat 18-25 degrees centigrade for 2000-2300s by using a mixed solution of HF, H2O2 and an additive, wherein a textured structure is formed on the surface of the substrate during the thinning process; preparing a PN junction by roll diffusion, and using ultrasonic atomization of phosphoric acid, thereby being nontoxic and nonpolluting, and achieving a uniform diffusion junction; and disposing siliconnitride antireflection layers on the front and back sides of the substrate; finally forming finger electrodes on the front and back sides by a silk-screen printing and sintering process. The method is suitable for the production technology of polycrystalline silicon 90-120[mu]m thick. Compared with a method for preparing a conventional polycrystalline silicon cell 180[mu]m thick, the method can reduce the thickness of the cell under the premise of ensuring a fragmentation rate, ensures battery efficiency, is simple in process, and low in cost. The method also solves the problem that the thincell is likely to be bent and is fragile, and can be industrialized by experimental verification.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a preparation method of an ultra-thin flexible crystalline silicon double-sided solar cell. Background technique [0002] Solar cells are one of the cleanest sources of energy today, inexhaustible. Solar cells are devices that convert light energy into electrical energy using the photovoltaic effect of semiconductor materials. At present, the market is still dominated by crystalline silicon cells, and monocrystalline silicon and polycrystalline silicon are mainly used as photoelectric conversion materials. [0003] At present, the thickness of conventional crystalline silicon cells is generally 180 μm-220 μm. The problem of this type of crystalline silicon cell is that it is brittle and easy to break when bent. Generally speaking, when the thickness of crystalline silicon cells decreases from 200 μm to less than 120 μm, they can exhibit good flexibility and flexibility. In order to...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0236H01L31/0216H01L31/0224
CPCY02E10/546Y02P70/50
Inventor 何仁陈静伟陈剑辉黄志平宋登元许颖
Owner HEBEI UNIVERSITY
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