Etchant composition for etching metal layer and method of forming conductive pattern using the same
A conductive pattern and metal layer technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as residues, surface stains, metal re-adsorption, etc., to suppress wiring short circuits or dark spots, and improve etching uniformity sexual effect
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[0051]
[0052] figure 1 and figure 2 is a schematic cross-sectional view for describing a method for producing wiring according to an exemplary embodiment.
[0053] refer to figure 1 , a lower conductive pattern 115 and a lower insulating layer 110 may be formed on the substrate 100 .
[0054] The substrate 100 may include a glass substrate, a polymer resin or plastic substrate, an inorganic insulating substrate, and the like.
[0055] The lower conductive pattern 115 may be formed by including, for example, transparent conductive oxides such as aluminum (Al), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), and ITO. The lower insulating layer 110 may be formed by including an organic insulating material such as acrylic resin, polysiloxane, etc. and / or an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, or the like.
[0056] The lower conductive pattern 115 may, for example, be provided as a conductive v...
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[0089] Formation of ITO on a glass substrate / Ag / ITO These three layers were cut into a size of 10 cm × 10 cm using a diamond knife to prepare samples.
[0090] The etchant compositions for metal layers prepared in Examples and Comparative Examples were injected into a spray type etching device (ETCHER, manufactured by K.C.Tech Co.). After setting the temperature to 40° C., when the temperature of the etchant composition for a metal layer reached 40±0.1° C., etching treatment was performed for 85 seconds by spraying the etchant composition for a metal layer to the sample.
[0091] After completion of the etching process, the sample was washed with deionized water, dried using a hot air drying device, and then the photoresist was removed using a photoresist stripper (PR stripper).
[0092] (1) Evaluation of overall etching
[0093] The etched samples were visually observed using a scanning electron microscope (SU-8010, manufactured by Hitachi Co.) to determine whether t...
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