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Porous tantalum-based oxynitride ceramic, and preparation method thereof

A nitride ceramic and oxynitride technology, applied in ceramic products, other household appliances, applications, etc., can solve the problems of long sintering time, low purity of oxynitride ceramics, and low heat transfer efficiency, and achieve heating and heat transfer. High efficiency, high open porosity, high radiation heat transfer efficiency

Active Publication Date: 2019-08-23
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional sintering method takes a long time to sinter, the heat transfer efficiency is low during sintering, and the purity of the prepared nitrogen oxide ceramics is low

Method used

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  • Porous tantalum-based oxynitride ceramic, and preparation method thereof
  • Porous tantalum-based oxynitride ceramic, and preparation method thereof
  • Porous tantalum-based oxynitride ceramic, and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Such as figure 1 As shown, a preparation method of the porous tantalum-based oxynitride ceramics of this embodiment comprises the following steps:

[0036] (1) Take 1g of BaTaO with a purity of 98% 2 The N powder was ground evenly and dried at 110°C for 12 hours to obtain BaTaO 2 N dry powder.

[0037] (2) BaTaO obtained in step (1) 2 N dry powder was placed in a stainless steel mold and held at a pressure of 100MPa for 60s to obtain BaTaO 2 N round flake green body.

[0038] (3) BaTaO obtained in step (2) 2 The N disc-shaped body is placed vertically and centered in the reaction vessel 1 (a closed graphite crucible in this embodiment) and arranged at intervals. The pressureless discharge plasma sintering is carried out in a nitrogen atmosphere, and the temperature is raised to 1250°C, keep it warm for 1min, and then cool to room temperature with the furnace to get BaTaO 2 N ceramic sheet.

[0039] Such as figure 2 As shown, in this example, BaTaO 2 The N ci...

Embodiment 2

[0054] A preparation method of the porous tantalum-based oxynitride ceramics of this embodiment, comprising the following steps:

[0055] (1) Take 1g of BaTaO with a purity of 98% 2 The N powder was ground evenly and dried at 110°C for 12 hours to obtain BaTaO 2 N dry powder.

[0056] (2) Put the powder obtained in step (1) into a stainless steel mold, and hold the pressure at 100MPa for 60s to obtain BaTaO 2 N round flake green body.

[0057] (3) BaTaO obtained in step (2) 2 The N disc-shaped body is placed vertically and centered in the reaction vessel 1 (a closed graphite crucible in this embodiment) and arranged at intervals. The pressureless discharge plasma sintering is carried out in a nitrogen atmosphere, and the temperature is raised to 1300°C, keep it warm for 1min, and then cool to room temperature with the furnace to get BaTaO 2 N ceramic sheet.

[0058] In this example, BaTaO 2 The placement method of the N-disc blank is the same as that of Example 1.

[0...

Embodiment 3

[0062] A preparation method of the porous tantalum-based oxynitride ceramics of this embodiment, comprising the following steps:

[0063] (1) Take 1g of BaTaO with a purity of 98% 2 The N powder was ground evenly and dried at 110°C for 12 hours to obtain BaTaO 2 N dry powder.

[0064] (2) Put the powder obtained in step (1) into a stainless steel mold, and hold the pressure at 100MPa for 60s to obtain BaTaO 2 N round flake green body.

[0065] (3) BaTaO obtained in step (2) 2 N disc-shaped blanks are vertically placed in the center of the reaction vessel 1 (this embodiment is a closed graphite crucible) and arranged at intervals, and the pressureless discharge plasma sintering is carried out in a nitrogen atmosphere, and the temperature is raised at a heating rate of 100°C / min. 1300°C, keep it warm for 1min, and then cool to room temperature with the furnace to get BaTaO 2 N ceramic sheet.

[0066] In this example, BaTaO 2 The placement method of the N-disc blank is the...

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Abstract

The invention discloses a preparation method of a porous tantalum-based oxynitride ceramic. The preparation method comprises following steps: 1, a tantalum-based oxynitride powder is grinded to be uniform, and is dried so as to obtain an oxynitride dry powder; 2, the oxynitride dry powder is introduced into a die for compression moulding to obtain sheet shaped blank bodies; 3, the sheet shaped blank bodies are vertically placed in reaction containers, wherein the sheet shaped blank bodies and the reaction containers are arranged at intervals, at a protective atmosphere, no-voltage spark plasmasintering is carried out so as to obtain oxynitride ceramic sheets; and 4, the oxynitride ceramic sheets are subjected to decarbonizing so as to obtain the porous tantalum-based oxynitride ceramic. The advantages of the preparation method are that: the sintering time is short, heat transfer efficiency is high, and product purity is high.

Description

technical field [0001] The invention relates to the technical field of preparation of porous functional ceramic materials, in particular to a porous tantalum-based oxynitride ceramic and a preparation method thereof. Background technique [0002] In recent years, AB (O, N) 3 Type oxynitride ceramics have received extensive attention due to their new optical, electrical, magnetic, and photocatalytic properties. This type of oxynitride has a lower theoretical band gap value (1.5-2.5eV) than oxides, and can catalyze the splitting of water in the visible light range (wavelength 400-800nm); at the same time, it has both metal oxides and nitrides. It has the advantages of good chemical stability and thermal stability. It is very stable in water and strong acid and strong alkali. It starts to decompose when it is above 600°C in the air and above 800°C in an inert atmosphere. As a typical representative, tantalum-based oxynitride BaTaO 2 N is a cubic crystal system, its theoreti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/64C04B38/00
CPCC04B35/58007C04B35/64C04B38/0038C04B2235/6562C04B2235/6567C04B2235/666C04B2235/96C04B2235/77C04B2235/785C04B2235/782C04B38/0074
Inventor 李端李斌曾良
Owner NAT UNIV OF DEFENSE TECH
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