Cavitation and Fenton reaction-assisted low pressure homogeneous polishing method and cavitation and Fenton reaction-assisted low pressure homogeneous polishing device for silicon carbide plane

Abstract

The invention discloses a cavitation and Fenton reaction-assisted low pressure homogeneous polishing method and a cavitation and Fenton reaction-assisted low pressure homogeneous polishing device fora silicon carbide plane. The method comprises the following steps: first, pre-treating a to-be-processed workpiece by means of Fenton reaction to generate a silicon dioxide corrosion layer on the surface of the to-be-processed workpiece to reduce the surface hardness; and then generating cavitation bubbles in an abrasive particle flow by means of a cavitation effect to increase the moving randomness of the abrasive particles, wherein the kinetic energy of the abrasive particles near the surface of silicon carbide is greater and the processing efficiency is improved. The silicon carbide workpiece pre-treated by Fenton reaction by means of the abrasive particle flow of the cavitation effect and a constraining module adjustable in included angle with the surface of the workpiece, so that theshearing strength of the abrasive flow to the processed surface in the flowing direction is uniform, and therefore, a uniform polishing purpose is achieved. The workpiece polished by the polishing method and the polishing device is uniform, high in processing efficiency, low in surface coarseness and high in surface quality.

Description

technical field [0001] The invention belongs to the field of ultra-precision machining, and in particular relates to a silicon carbide plane low-pressure homogenization polishing method assisted by cavitation and Fenton reaction. Background technique [0002] Silicon carbide is a representative of the third-generation semiconductor materials. It has a wide band gap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, and has broad application prospects in production. At present, silicon carbide has been widely used in the fields of abrasives, metallurgy, LED solid-state lighting and high-frequency devices, especially in electronic applications such as high temperature and high pressure, and in extreme environments such as aerospace and military industries. [0003] High-purity single-crystal silicon carbide is an important material for the manufacture of semiconductors. The application of single crystal silicon carbide requires no ...

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Problems solved by technology

[0007] In order to overcome the shortcomings of low surface roughness, high surface quality, uniform surface, and high-efficiency processing when the existing polishing method processes silicon carbide planes, the present invention provides a low-pressure silicon carbide plane assisted by cavitation and Fenton reaction. The method and device for uniform polishing can make the processed single crystal silicon carbide have low surface roughness, high surface quality, good surface uniformity and high processing efficiency

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