A high-bandwidth cmos APD optoelectronic device operating in the visible light band

Abstract

The invention relates to a high-bandwidth CMOS APD photoelectric device working in a visible light waveband. The high-bandwidth CMOS APD photoelectric device comprises a P substrate, and two deep N wells stacked on the P substrate, two P well layers are stacked on the deep N wells, one N+ layer and one P+ layer are stacked on each P well layer, a PN junction is formed by the heavily doped N+ layers and the lightly doped P well layers, namely an avalanche region is formed, the avalanche region comprises a first avalanche region and a second avalanche region, and is provided with two illumination windows, when a light source is emitted into the device and is absorbed by a light absorption region, a photon-generated carrier is generated, and the photon-generated carrier moves to the first avalanche region and the second avalanche region under the action of an electric field to participate in multiplication; and STI guard rings are added at two ends of the gap of the P well layers. The design technology is designed from two aspects of the PN junction and the size of the depletion region, the dark current of the device is reduced, and the bandwidth of the device is improved.

Description

Technical field [0001] The present invention belongs to the field of visible light detection, and the design technology design of APD optoelectronic devices involves a new design technology with high bandwidth CMOS APD photoelectric device. Background technique [0002] Avalanche photodio is a photodetector that enables high sensitivity and high bandwidth. It has a multiplication electron, hole. The basic design technology of CMOS APD is similar to the basic design technology of ordinary PN junctions, but new design techniques can be effectively improved during design, but can effectively improve the work bandwidth of the device. The CMOS APD working in the linear zone is widely used in its low voltage and low cost features, which are widely used in the Internet of Things, CD (CD-ROM), digital multi-function optical disc (DVD), and Blu-ray disc. [0003] The device design technology of the CMOS APD can be divided into two categories according to the type of PN. One is an electron...

AI Technical Summary

Problems solved by technology

The traditional APD device design technology is only optimized on the P+ / N well, ignoring the drift velocity of the photogenerated electron carriers and the reasonable use of the STI guard ring, so it cannot achieve high bandwidth while maintaining low dark current

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