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Plasma etching method

A plasma and main etching technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inconvenience and complex pressure resistance of liquid crystal panels, to solve metal damage and ensure etching selection. The effect of ratio and uniformity

Inactive Publication Date: 2019-09-06
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a plasma etching method, which is used to solve the problem of complicated and inconvenient testing of liquid crystal panel pressure resistance in the prior art

Method used

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  • Plasma etching method

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Experimental program
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Embodiment 1

[0029] The present invention provides a kind of plasma etching method, the following combination Figure 1 to Figure 2 The plasma etching method is described in detail.

[0030] refer to figure 1 , figure 1 The schematic diagram of the cross-sectional structure of the substrate to be etched 101 provided in this embodiment includes a gate insulating layer 102 , an amorphous silicon layer 103 , a metal layer 104 and a photoresist layer 105 from bottom to top.

[0031] refer to figure 2 , figure 2 A schematic flow chart of a plasma etching method provided in this embodiment, the method at least includes:

[0032] S10: providing a substrate 101 to be etched, and placing the substrate 101 in the reaction chamber;

[0033] S20: introducing main etching gas, auxiliary etching gas for adjusting etching ratio, and dilution gas for diluting and adsorbing etching by-products and other unreacted substances into the reaction chamber;

[0034] S30: After the etching is finished, int...

Embodiment 2

[0046] In this embodiment, a plasma etching method suitable for dry etching equipment model TEL Impressio 2400ECCP is proposed. The process of the plasma etching method described in this embodiment is the same as that of the plasma etching method described in Embodiment The flow of the bulk etching method is roughly the same.

[0047] refer to image 3 , image 3 The schematic diagram of the cross-sectional structure of the substrate to be etched 301 provided in this embodiment, from bottom to top is the gate insulating layer 302, the amorphous silicon layer 303, the metal layer 304 and the photoresist layer 305

[0048] The plasma etching method includes:

[0049] S10: providing a substrate 301 to be etched, and placing the substrate 301 in the reaction chamber;

[0050] S20: introducing main etching gas, auxiliary etching gas for adjusting etching ratio, and dilution gas for diluting and adsorbing etching by-products and other unreacted substances into the reaction chambe...

Embodiment 3

[0060] In this embodiment, a plasma etching method suitable for dry etching equipment model TEL Impressio 2400ECCP is proposed. The process of the plasma etching method described in this embodiment is the same as that of the plasma etching method described in Embodiment The flow of the bulk etching method is roughly the same.

[0061] refer to image 3 , image 3 The schematic diagram of the cross-sectional structure of the substrate to be etched 301 provided in this embodiment, from bottom to top is the gate insulating layer 302, the amorphous silicon layer 303, the metal layer 304 and the photoresist layer 305

[0062] The plasma etching method includes:

[0063] S10: providing a substrate 301 to be etched, and placing the substrate 301 in the reaction chamber;

[0064] S20: introducing main etching gas, auxiliary etching gas for adjusting etching ratio, and dilution gas for diluting and adsorbing etching by-products and other unreacted substances into the reaction chambe...

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PUM

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Abstract

The invention provides a plasma etching method. The method at least comprises the following steps of providing a substrate to be etched, and placing the substrate in a reaction cavity; introducing a main etching gas, an auxiliary etching gas and a diluent gas into the reaction cavity; and after the etching is finished, introducing a residual charge removal gas into the reaction cavity, so as to remove residual charges attached to the surface of the substrate; and discharging the residual etching gas and etching byproducts in the reaction cavity through a vacuum system. According to the plasmaetching method, after the etching step of the plasma etching method is completed, the step of introducing the residual charge removing gas is added, so that residual charge removing gas reacts with residual charges attached to a metal layer, the charges remaining on the surface of the metal layer are removed, the etching selection ratio and uniformity of plasma etching are ensured, and the problemthat metal is damaged due to electrostatic discharge after etching in a plasma etching process is solved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a plasma etching method. Background technique [0002] Plasma etching is the most common form of dry etching. Its principle is that under low pressure, the reactive gas is excited by radio frequency power to generate ionization and form plasma. Plasma is composed of charged electrons and ions , under the impact of electrons, the gas in the reaction chamber can not only transform into ions, but also absorb energy and form a large number of active groups; the active reactive groups form a chemical reaction with the surface of the etched material, and form volatile Reaction product; The reaction product is separated from the surface of the etched material and is drawn out of the cavity by the vacuum system. [0003] In a parallel electrode plasma reaction chamber, the object to be etched is placed on the electrode with a smaller area. In this case, a DC bias wi...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/3213
CPCH01L21/02071H01L21/32136
Inventor 张永柯
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD