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Laser Heating Controlled Magnetically Random Memory Cells, Memory and Logic Devices

A storage unit and laser heating technology, applied in the fields of information technology and microelectronics, can solve the problems of restricting the development of information technology and unfavorable to the miniaturization of storage devices.

Active Publication Date: 2020-11-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, magnetic storage based on the spin-orbit moment effect usually requires the assistance of an external magnetic field, which is not conducive to the miniaturization of storage devices and will restrict the further development of information technology. Therefore, how to use the spin-orbit moment effect to control the magnetization flip without an external magnetic field, Realizing information storage and processing is an urgent need in the information field

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  • Laser Heating Controlled Magnetically Random Memory Cells, Memory and Logic Devices
  • Laser Heating Controlled Magnetically Random Memory Cells, Memory and Logic Devices
  • Laser Heating Controlled Magnetically Random Memory Cells, Memory and Logic Devices

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Embodiment Construction

[0036] In the present invention, the magnetic gradient change is generated by heating the magnetic free layer in the magnetic random storage unit by laser, and the current is applied to the spin-orbit coupling layer, and the magnetic moment orientation reversal of the magnetic film is induced by the spin current; since no high-density current is used to pass The junction region of the magnetic random memory unit can effectively reduce energy consumption, effectively control the thermal effect, and prolong the working life of the device.

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. For clarity, components in the drawings may not be drawn to scale. Also, some components may be omitted from the drawings. It is contemplated that elements and features of one embodiment ...

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Abstract

The invention discloses a storage unit, a storage unit and a logic device for controlling magnetic randomness by laser heating. The storage unit includes: a substrate; a spin-orbit coupling layer; The spin flow in the surface direction of the spin-orbit coupling layer; the magnetic free layer, the laser irradiates and heats the magnetic free layer to generate the magnetic gradient change of the magnetic free layer, and combines the spin current to make the magnetic of the magnetic free layer Orientation flip of moment; protective layer. In the present invention, the gradient change of magnetism is generated by irradiation and heating of the magnetic free layer by laser light, and the spin current induced gradient change of the magnetic thin film is produced by the interface between the spin-orbit coupling layer and the magnetic free layer after the current is applied to the spin-orbit coupling layer. The directional reversal of the magnetic moment can realize the reversal of the regulation and control of the magnetization without an external magnetic field, which can effectively reduce energy consumption, effectively control the thermal effect, and prolong the working life of the device.

Description

technical field [0001] The invention relates to the fields of information technology and microelectronics, in particular to a storage unit, memory and logic device for controlling magnetic randomness by laser heating. Background technique [0002] In today's information society, the use of electron spins for information processing and storage has attracted worldwide attention and research, including magnetic nanologic, full spin logic, and magnetic tunnel junctions as logic operations and storage. The current commercially developed spin-transfer torque-magnetic random access memory (STT-MARM) and the spin-orbit moment-magnetic random access memory (SOT-MRAM), which is still in laboratory research, are both based on the magnetization of the magnetic free layer in the storage unit. The reversal of the magnetic resistance leads to the change of the magnetic resistance, thereby realizing the storage function of information, which has the advantages of fast speed and non-volatile...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16H01L43/08H10N50/10
CPCG11C11/161H10N50/10
Inventor 王开友刘雄华盛宇曹易
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI