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Thick film resistor paste used for ceramic piezoresistive-type pressure sensor and preparation method

A pressure sensor and thick film resistor technology, applied in the field of thick film resistor paste and preparation for ceramic piezoresistive pressure sensors, can solve the problems of poor stability, low strain coefficient, large resistance value, etc., achieve high stability, improve The effect of gage factor and resistance reduction

Active Publication Date: 2019-09-13
SHAOXING UNIV YUANPEI COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention proposes a ceramic piezoresistive pressure sensor in order to overcome the existing problems in the current prior art that the resistive paste used for the thick film pressure sensor has a large resistance value, a low gauge coefficient, and poor stability. Thick film resistor paste and preparation method

Method used

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  • Thick film resistor paste used for ceramic piezoresistive-type pressure sensor and preparation method
  • Thick film resistor paste used for ceramic piezoresistive-type pressure sensor and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1: A kind of preparation method of ceramic piezoresistive pressure sensor thick-film resistance slurry comprises the following preparation steps:

[0031] S1: Preparation of conductive phase:

[0032] S1.1: Add deionized water to 1.5g of ruthenium trichloride to make a 0.1mol / L ruthenium trichloride solution, then add 1.5g of carbon nanotubes, raise the temperature to 60°C and stir, then add hydrogen drop by drop Sodium oxide solution, continue to stir and age for 2h, then centrifuge and wash, and calcinate at 300°C for 20h to obtain a ruthenium oxide / carbon nanotube composite material;

[0033] S1.2: Mix 28.8g of ruthenium oxide powder with 2.4g of ruthenium oxide / carbon nanotube composite material to prepare a conductive phase;

[0034] S2: Preparation of inorganic binder phase: CaO, B 2 o 3 , SiO 2 and ZrO 2 According to the ratio of 5:4.5:5.5:1.5, add it to the agate ball mill jar and stir for 1 hour, then place it in a crucible and melt it at 1100°C f...

Embodiment 2

[0040] Embodiment 2: A kind of preparation method of ceramic piezoresistive pressure sensor thick-film resistance slurry comprises the following preparation steps:

[0041] S1: Preparation of conductive phase:

[0042] S1.1: Add deionized water to 3.1g ruthenium trichloride to make a 0.13mol / L ruthenium trichloride solution, then add 1.45g carbon nanotubes, heat up to 65°C and stir, then add hydrogen drop by drop Sodium oxide solution, continue to stir and age for 3 hours, then centrifuge and wash, and calcinate at 250°C for 24 hours to obtain a ruthenium oxide / carbon nanotube composite material;

[0043] S1.2: Mix 26.7g of ruthenium oxide powder with 3.8g of ruthenium oxide / carbon nanotube composite material to prepare a conductive phase;

[0044] S2: Preparation of inorganic binder phase: CaO, B 2 o 3 , SiO 2 and ZrO 2 According to the ratio of 4:5:5:2, add it to the agate ball mill jar and stir for 2 hours, then place it in a crucible and melt it at 1300°C for 1.5 hour...

Embodiment 3

[0050] Embodiment 3: A kind of preparation method of ceramic piezoresistive pressure sensor thick-film resistance paste, comprises the following preparation steps:

[0051] S1: Preparation of conductive phase:

[0052] S1.1: Add deionized water to 3.9g of ruthenium trichloride to make a 0.15mol / L ruthenium trichloride solution, then add 1.36g of carbon nanotubes, heat up to 70°C and stir, then add hydrogen drop by drop Sodium oxide solution, continue to stir and age for 4 hours, then centrifuge and wash, and calcinate at 350°C for 15 hours to obtain a ruthenium oxide / carbon nanotube composite material;

[0053] S1.2: Mix 21.3g of ruthenium oxide powder with 4.3g of ruthenium oxide / carbon nanotube composite material to prepare a conductive phase;

[0054] S2: Preparation of inorganic binder phase: CaO, B 2 o 3 , SiO 2 and ZrO 2 According to the ratio of 4.5:4:4.5:1.8, it was added to the agate ball milling tank and stirred for 1.5 hours, then placed in a crucible and melte...

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Abstract

The present invention discloses a thick film resistor paste used for a ceramic piezoresistive-type pressure sensor and a preparation method, pertaining to the field of thick film electronic materials.The paste comprises: a conductive phase, wherein the components of the conductive phase are ruthenium oxide and ruthenium oxide / carbon nano-tube composite material(s); an inorganic binding phase, wherein the components of the inorganic binding phase are CaO, B2O3, SiO2 and ZrO2; an organic carrier, wherein the components of the organic carrier are organic solvent(s), thickening agent(s), surfaceactive agent(s), thixotropic agent(s) and rheological agent(s); and modifier, wherein the components of the modifier are silicon dioxide coated with polyacrylic acid resin and lead oxide. The conductive phase of the thick film resistor paste is added with the ruthenium oxide / carbon nano-tube composite material(s), so that the electrical conductivity of the conductive phase is improved, and the conductive phase has higher stability; and the thick film resistor paste is added with the modifier mixed by the silicon dioxide coated with the polyacrylic acid resin and the lead oxide, so that the gauge factor of the thick film resistor paste is improved after the thick film resistor paste sintered, the resistance value is reduced, and the performance stability and the adhesive force of substrate(s) are improved.

Description

technical field [0001] The invention relates to the field of thick-film electronic materials, in particular to a thick-film resistance slurry for a ceramic piezoresistive pressure sensor and a preparation method thereof. Background technique [0002] Sensor technology is one of the high and new technologies that are developing rapidly, and it is also an important symbol of the development of contemporary science and technology. As the tentacles of human beings to detect external information, sensor technology refers to the technology of collecting various forms of information with high precision, high efficiency and high reliability. It converts non-electrical information into easy-to-handle electrical information, and further understands and transforms the world for people. , creating the necessary conditions and providing new methods. At present, pressure sensors play an important role in automatic control and detection. Pressure plays an important role in the detection o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B1/22H01B13/00H01C7/00H01C17/065
CPCH01B1/16H01B1/22H01B13/00H01C7/003H01C17/0652H01C17/06533H01C17/0658H01C17/06586
Inventor 徐志望
Owner SHAOXING UNIV YUANPEI COLLEGE
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