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A laser boron doped selective emitter topcon structure battery and its preparation method

A selective, emitter technology, used in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of reduced surface doping concentration, deepened junction depth, etc., to achieve the effect of increasing fill factor, increasing open circuit voltage, and improving conversion efficiency

Active Publication Date: 2021-05-28
TRINA SOLAR CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, using borosilicate glass (BSG) as a doping source for laser doping is also a technical difficulty in the world. It is difficult for lasers to dope boron from BSG into P + layer, will result in P + The surface doping concentration of the layer is reduced, and the junction depth is deepened

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  • A laser boron doped selective emitter topcon structure battery and its preparation method
  • A laser boron doped selective emitter topcon structure battery and its preparation method

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Embodiment 1

[0025] The preparation method of the laser boron doped selective emitter TOPCon solar cell of the present invention comprises the following steps, such as figure 1 Shown:

[0026] Ⅰ. Texturing and RCA cleaning of N-type silicon wafers;

[0027] Ⅱ. Carry out boron diffusion, where BBr 3 N 2 Flow rate 130sccm, push temperature: 900°C; push time: 2h, push to form P with high boron surface concentration ++ layer without oxidation process;

[0028] Ⅲ. Use 532nm green nanosecond Q-switched laser with power of 28W and scanning speed of 20m / s to dope the metal grid line area;

[0029] Ⅳ. After cleaning, put it back into the diffusion furnace for oxidation. The oxidation process parameters are: O 2 The flow rate is 30sccm, the oxidation temperature is 920°C; the oxidation time is 2h, so as to form a selective emitter;

[0030] Ⅴ. Removal of BSG and P on the back + Layer, prepare Tunnel oxide layer (tunnel oxide layer) and doped thin film silicon layer on the back;

[0031] Ⅵ. R...

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Abstract

The invention discloses a laser boron-doped selective emitter TOPCon structure battery and a preparation method thereof. The method comprises the following steps: cleaning an N-type silicon chip and making texture; during boron diffusion, promoting the formation of P with a high boron surface concentration. ++ Layer, no oxidation process; use laser to dope the gate line area; after cleaning, put it back into the diffusion furnace for oxidation to form a selective emitter; remove the BSG and P on the back + layer, prepare a tunneling oxide layer and a doped thin film silicon layer on the back side; remove the polysilicon produced by the front side plating and the BSG obtained in step II, and deposit the passivation layer and SiN on both sides x Anti-reflection film; screen-printed double-sided electrodes. The preparation method of the invention can not only increase the open-circuit voltage of the battery, but also improve the filling factor of the battery, and finally improve the conversion efficiency of the TOPCon solar battery.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a laser boron-doped selective emitter TOPCon structure battery and a preparation method thereof. Background technique [0002] Improving battery conversion efficiency and reducing battery manufacturing costs have always been the goals pursued by the industry. A large number of new high-efficiency battery structure technologies have been proposed, and a large number of researches have been carried out by many scientific research institutions and enterprises at home and abroad. Among them, the tunnel oxide passivating contacts (Tunnel Oxide Passivating Contacts, TOPCon) solar cell uses a laminated film of ultra-thin silicon dioxide and heavily doped silicon film as the back passivation contact. After high temperature annealing, it has excellent Excellent passivation performance and extremely low contact resistance, high temperature resistance. The photoelectric ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 林文杰何宇龚剑邹杨王尧袁玲刘成法陈达明陈奕峰沈辉
Owner TRINA SOLAR CO LTD