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Preparation method and application of two-dimensional ultra-thin CuBr nano sheet

An ultra-thin, single-crystal nanotechnology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of good CuBr single crystal, difficult to prepare high-quality two-dimensional non-layered CuBr single crystal materials, etc. To achieve the effect of easy control of process parameters, high yield and strong controllability

Active Publication Date: 2019-10-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] Aiming at the problem that it is difficult to prepare high-quality two-dimensional non-layered CuBr single crystal material in the background technology, the purpose of the present invention is to provide a preparation method and application of a two-dimensional ultra-thin CuBr single crystal nanosheet. chemical vapor deposition method using BiBr 3 As a reaction source and copper foil as a means of confinement, the thickness and size of the two-dimensional nanosheets produced can be controlled by adjusting the amount of source, reaction temperature and growth time, and the prepared CuBr has good single crystallinity, and there is no lattice between it and the substrate. lost pair

Method used

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  • Preparation method and application of two-dimensional ultra-thin CuBr nano sheet
  • Preparation method and application of two-dimensional ultra-thin CuBr nano sheet
  • Preparation method and application of two-dimensional ultra-thin CuBr nano sheet

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Effect test

Embodiment 1

[0030] A preparation method of a two-dimensional ultrathin CuBr single crystal nanosheet, comprising the following steps:

[0031] Step 1: Add 10 mg of BiBr 3 powder on Al 2 o 3 Crucible, then put the crucible into the center of the first heating zone upstream of the quartz tube; place the mica substrate on the quartz plate, cover the copper foil with a flat surface on the substrate, control the distance between the copper foil and the mica substrate to be 50 μm, and then place the The quartz plate is placed in the center of the second heating zone downstream of the quartz tube;

[0032] Step 2: Vacuumize the inside of the quartz tube to below 0.1Pa, and pass 500 sccm of Ar gas to remove the residual air in the tube and keep the air pressure in the tube at normal pressure, and then pass H into the tube 2 5% Ar / H by volume 2 Mixed gas, adjust the air flow to the flow rate required for material growth of 50 sccm;

[0033] Step 3: Heat the second heating zone to 325°C within...

Embodiment 2

[0037] A preparation method of a two-dimensional ultrathin CuBr single crystal nanosheet, comprising the following steps:

[0038] Step 1: Add 10 mg of BiBr 3 powder on Al 2 o 3 Put the crucible into the center of the first heating zone upstream of the quartz tube; place the mica substrate on the quartz plate, cover the substrate with flat copper foil, and control the distance between the copper foil and the mica substrate to be 0 μm, and then place the The quartz plate is placed in the center of the second heating zone downstream of the quartz tube;

[0039] Step 2: Vacuumize the inside of the quartz tube to below 0.1Pa, and pass 500 sccm of Ar gas to remove the residual air in the tube and keep the air pressure in the tube at normal pressure, and then pass H into the tube 2 5% Ar / H by volume 2 Mixed gas, adjust the air flow to the flow rate required for material growth of 50 sccm;

[0040] Step 3: Heat the second heating zone to 325°C within 15 minutes, keep it for 15 m...

Embodiment 3

[0043] Step 1: Add 50 mg of BiBr 3 powder on Al 2 o 3Then put the crucible into the center of the first heating zone upstream of the quartz tube, place the mica substrate on the quartz plate, cover the substrate with flat copper foil, control the distance between the copper foil and the mica substrate to be 25 μm, and then place the The quartz plate is placed in the center of the second heating zone downstream of the quartz tube;

[0044] Step 2: Vacuumize the inside of the quartz tube to below 0.1Pa, and introduce 500 sccm of Ar gas to remove the residual air in the tube and keep the air pressure in the tube at normal pressure, and then inject Ar gas into the tube to adjust the air flow to the growth of the material The required flow rate is 75 sccm;

[0045] Step 3: Heating the second heating zone to 305°C within 15 minutes, keeping it for 15 minutes, then heating the first heating zone to 275°C within 10 minutes, reacting for 5 minutes, cooling naturally to room temperat...

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Abstract

The invention provides a preparation method and application of a two-dimensional ultra-thin CuBr nano sheet, and belongs to the technical field of two-dimensional nano material preparation. Accordingto the preparation method, Van der Waals epitaxial growth is carried out on mica by a simple chemical vapor deposition method, and thus lattice mismatch between a substrate and a material is avoided;and BiBr3 is used as a reaction source, a copper foil is used as a confinement mean, the triangular single crystal nano sheet with a thickness of 0.9 nm-200 nm and a size of 2-150 [mu]m is obtained byadjusting parameters such as a source quantity, a reaction temperature and a reaction time, the controlled growth of the CuBr nano sheet is realized, and the prepared CuBr is good in mono-crystallineproperties, and has no lattice mismatch with a substrate.

Description

technical field [0001] The invention belongs to the technical field of preparation of two-dimensional nanomaterials, and in particular relates to a preparation method and application of two-dimensional ultrathin non-layered CuBr single crystal nanosheets. Background technique [0002] Since graphene was discovered by Andre Geim in 2004, many different kinds of two-dimensional materials with different properties, such as hexagonal boron nitride, transition metal sulfide, black phosphorus, etc. have been discovered one after another and have shown extremely excellent electrical properties and optical properties. However, the current research on two-dimensional materials is mainly limited to materials with layered structures, because layered materials have weak interlayer van der Waals contacts and can be easily prepared by methods such as mechanical exfoliation or CVD. However, compared with layered materials, non-layered materials occupy most of the material types, and there...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B29/64C30B25/02C23C14/04C23C14/18C23C14/24H01L31/18B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00C23C14/042C23C14/18C23C14/24C30B25/02C30B29/12C30B29/64H01L31/1876Y02P70/50
Inventor 熊杰龚传辉晏超贻汪洋饶高峰黄建文张淼邬春阳戴丽萍张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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