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High-voltage insulation barium titanate-silica gel composite and preparation method and application thereof

A high-voltage insulation and composite material technology, applied in the direction of non-polymer adhesive additives, adhesives, adhesive additives, etc., can solve the problems that cannot meet the high-voltage and high-frequency requirements of silicon carbide power electronic devices, and achieve high-voltage working conditions And partial discharge is too high, the effect of homogenizing the electric field distribution, and improving the dielectric performance

Inactive Publication Date: 2019-10-29
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems in the prior art, the present invention provides a high-voltage insulating barium titanate-silicon gel composite material and its preparation method and application, so as to solve the problem that the organic silicon gel used in module packaging in the prior art cannot meet the requirements of silicon carbide power electronic devices. The problem of high voltage and high frequency demand

Method used

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  • High-voltage insulation barium titanate-silica gel composite and preparation method and application thereof
  • High-voltage insulation barium titanate-silica gel composite and preparation method and application thereof

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Embodiment 1

[0024] This embodiment provides a high-voltage insulating barium titanate-silica gel composite material for packaging high-power silicon carbide power electronic devices. The preparation steps are as follows: take 0.5% mass fraction of KH-550 silane coupling agent, 30 mass parts Nanoscale barium titanate with a size of 200nm is blended in absolute ethanol, and the ultrasonic vibration dispersion time is 1h to obtain modified barium titanate; take 70 parts by mass of silicone gel component A and 70 mass parts of silicone gel group B Disperse by ultrasonic vibration in a water bath at 10°C for 1 hour, and mix at a high speed of 2000r / min for 2 minutes to obtain a barium titanate-silica gel composite material. Take the obtained material and place it in a vacuum defoaming chamber for 1 hour to remove air bubbles, and inject it into the packaging module. Heat it in a high-temperature oven at 150°C for 1 hour.

Embodiment 2

[0026] This embodiment provides a high-voltage insulating barium titanate-silica gel composite material for packaging high-power silicon carbide power electronic devices. The preparation steps are as follows: take 1% mass fraction of KH-550 silane coupling agent, 30 mass parts Nanoscale barium titanate with a size of 100nm is blended in absolute ethanol, and the ultrasonic vibration dispersion time is 1h to obtain modified barium titanate; take 70 parts by mass of silicone gel component A and 70 mass parts of silicone gel group B Disperse by ultrasonic vibration in a water bath at 10°C for 1 hour, and mix at a high speed of 2000r / min for 3 minutes to obtain a barium titanate-silica gel composite material. Take the obtained material and place it in a vacuum defoaming chamber for 1 hour to remove air bubbles, and inject it into the packaging module. Heat it in a high-temperature oven at 165°C for 1 hour.

Embodiment 3

[0028] This embodiment provides a high-voltage insulating barium titanate-silica gel composite material for packaging high-power silicon carbide power electronic devices. The preparation steps are as follows: take 1% mass fraction of KH-550 silane coupling agent, 20 mass parts Nanoscale barium titanate with a size of 100nm is blended in absolute ethanol, and the ultrasonic vibration dispersion time is 1h to obtain modified barium titanate; take 80 parts by mass of organosilicon gel component A and 80 mass parts of organosilicon gel group B Disperse by ultrasonic vibration in a water bath at 10°C for 1 hour, and mix at a high speed of 2000r / min for 3 minutes to obtain a barium titanate-silica gel composite material. Take the obtained material and place it in a vacuum defoaming chamber for 1 hour to remove air bubbles, and inject it into the packaging module. Heat it in a high-temperature oven at 120°C for 1 hour.

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Abstract

The invention discloses a high-voltage insulation barium titanate-silica gel composite and a preparation method and application thereof. The barium titanate-silica gel composite is prepared from sintered modified barium titanate with a high dielectric constant, an organic silica gel A component, and an organic silica gel B component (curing agent), the mass ratio of the modified barium titanate tothe organic silica gel A component is (1:4) to (2:3), and the mass ratio of the organic silica gel A component to the organic silica gel B component is 1:1. A preparation process is simple, the prepared barium titanate-silica gel composite has the advantages of being good in fluidity and conductivity nonlinearity, high in dielectric constant and high in insulation voltage resistance, the conductivity of the high-voltage insulation barium titanate-silica gel composite is very small when the electric field strength is low, but is sharply increased when the field strength is increased to a certain extent, and the high-voltage insulation barium titanate-silica gel composite has the potential of homogenizing electric field distribution and reducing local discharge, and has good application prospects in the field of packaging of silicon carbide electrical electronic devices.

Description

Technical field: [0001] The invention belongs to the technical field of packaging of power electronic devices, and relates to a high-voltage insulating barium titanate-silica gel composite material, a preparation method and an application. Background technique: [0002] Silicon carbide (SiC) has a high breakdown electric field strength (10 times that of silicon materials) and low intrinsic carrier concentration (10 times that of silicon materials at room temperature). -20 )Features. On the one hand, the high breakdown electric field strength means that silicon carbide power electronic devices can have superior withstand voltage characteristics and smaller on-resistance than silicon-based devices. On the other hand, the low intrinsic carrier concentration enables silicon carbide devices to have a theoretical junction temperature up to 600°C, which provides a basis for high-temperature applications of devices. In addition, the high saturation migration velocity and low diele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J183/04C09J11/04
CPCC08K2201/003C08K2201/011C08L2203/206C09J11/04C09J183/04C08K9/06C08K3/24
Inventor 梅云辉李俊杰李欣陆国权
Owner TIANJIN UNIV
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