High-performance composite thermal interface material and preparation method thereof

A thermal interface material and composite technology, applied in the direction of heat exchange materials, chemical instruments and methods, etc., can solve problems such as incompatibility of material properties, achieve large thermal melting, high thermal conductivity thermal melting, and improve thermal conductivity.

Inactive Publication Date: 2019-10-29
YUNNAN ZHONGXUAN LIQUID METAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, there are almost no metal thermal interface materials that are directly mixed with low melting point metals and high thermal conductivity ceramics on the market. The reason is that liquid metals are metals, and ceramic materials are nonmetals. The two materials are not compatible in terms of material characteristics.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Take 2.0 parts by mass of aluminum nitride ceramic particles with a particle size of 20 μm and a thermal conductivity of 275W / M.K, and 98 parts of bismuth indium tin alloy with a melting point of 60°C. The liquid metal and the ceramic particles are heated at 100°C. Stirring and mixing by vacuuming at -200°C for 50 minutes, and then cooling naturally to 25°C to prepare a bismuth indium tin alloy material containing 2.0% aluminum nitride ceramic material.

[0022] The thermal conductivity of the composite thermal interface material prepared in this example is 61.65W / M.K (25°C), and the thermal conduction resistance is 1.5e-05m 2 K / W, the density is 7.03g / cm 3 , with a melting point of 60°C, and made into metal flakes of 0.083-0.076mm.

Embodiment 2

[0024] Take aluminum nitride ceramic particles and silicon carbide ceramic particles with a mass ratio of 1:1 (5 parts each), the particle diameters are 20 μm and 600 nm, and the thermal conductivity is 275W / M.K and 300W / M.K respectively, and 90 parts by mass A bismuth indium tin alloy with a melting point of 60°C, the liquid metal and the ceramic particles are stirred and mixed in a vacuum at 100°C-200°C for 50 minutes, and then naturally cooled to 25°C to prepare bismuth containing 10% composite ceramic material Indium tin ceramic alloy material.

[0025] The thermal conductivity of the composite thermal interface material prepared in this example is 48.87W / M.K, the melting point is 60°C, and the density is 7.30g / cm 3 , conduction thermal resistance 1.6e-05m 2 K / W, made of metal sheet 0.083-0.076mm.

Embodiment 3

[0027] Take 2.5 parts of aluminum nitride ceramic particles in parts by mass, with a particle size of 20 μm, and 97.5 parts of bismuth indium tin alloy with a melting point of 60°C, and stir the liquid metal and the ceramic particles in a vacuum at 100°C-200°C , mixed for 50 minutes, and then naturally cooled to 25° C. to prepare a bismuth-indium-tin alloy material containing 2.5% aluminum nitride.

[0028] The thermal conductivity of the composite thermal interface material prepared in this implementation is 67.74W / M.K, the melting point is 60°C, and the density is 7.09g / cm 3 , conduction thermal resistance 1.6e-05m 2K / W, made of metal sheet 0.083-0.076mm.

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PUM

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Abstract

The invention relates to a high-performance composite thermal interface material and a preparation method thereof. The high-performance composite thermal interface material is prepared from liquid metal and ceramic particles in a high-temperature fusion mode; the thermal interface material is sheet metal with the thickness being less than 0.1 mm, and the grain size of the ceramic particles is 600nm-20 [mu]m. The melting point of the thermal interface material is the same as the melting point of the liquid metal, the thermal conductivity is high, conductive thermal resistance is reduced, and ductility and softness are good; the high-performance composite thermal interface material can be applied to chip heat dissipation and large-power devices such as IGBT and replaces silicone grease withlow thermal conductivity, the temperature difference between a chip and a heat dissipater is reduced, and heat is quickly dissipated; and the high-performance composite thermal interface material isstable in performance, and can be manufactured into interface materials with various shapes and sizes.

Description

technical field [0001] The invention relates to the technical field of thermal interface materials, in particular to a high-performance composite thermal interface material and a preparation method thereof. Background technique [0002] With the rapid development of micro-nano electronic technology, the thermal barrier problem caused by highly integrated chips and optoelectronic devices has become a key bottleneck restricting its sustainable development. This development bottleneck puts forward higher requirements for advanced thermal interface material technology and advanced heat dissipation technology (including advanced chip cooling technology). Systematic development of liquid metal heat conduction sheets based on low melting point metals and their alloys, whose performance is far superior to that of traditional super thermal interface materials. large-scale industrial applications. [0003] Conventional thermal interface materials are mainly concentrated on thermal c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K5/14
CPCC09K5/14
Inventor 杨泽俊吴清申徐文志刘静
Owner YUNNAN ZHONGXUAN LIQUID METAL TECH CO LTD
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