N * M NMOSFET terahertz array detector based on DRA and antenna design method

Abstract

The invention discloses an N * M NMOSFET (N-channel Metal Oxide Semiconductor Field Effect Transistor) terahertz array detector based on DRA (Digital Radiography Analysis). The N * M terahertz detector array is connected with one end of a first blocking capacitor; the other end of the first blocking capacitor is connected with one end of a second bias resistor; the other end of the second bias resistor is connected with a second bias voltage; the second bias resistor is also connected with the positive electrode of the low-noise pre-amplifier; two ends of the first resistor are respectively connected with the negative electrode and the output electrode of the low-noise pre-amplifier; one end of the first resistor is further connected with one end of the second resistor, the other end of the second resistor is connected with one end of the second blocking capacitor, the other end of the second blocking capacitor is grounded, the other end of the first resistor is connected with one endof the third blocking capacitor, and the other end of the third blocking capacitor is grounded. Compared with the prior art, the technical scheme of the invention effectively improves the imaging resolution of the terahertz detector.

Description

technical field [0001] The invention relates to the technical field of terahertz detectors, in particular to an N×M DRA-based NMOSFET terahertz array detector and an antenna design method. Background technique [0002] Terahertz (THz) waves generally refer to electromagnetic waves with a frequency of 0.1-10 THz (wavelength of 0.03-3mm). Terahertz waves are between microwaves and infrared rays, and are also called T-rays. For a long time, due to the lack of high-power terahertz radiation sources and high-performance terahertz detectors, the research progress of terahertz technology has been relatively lagging behind, so it is called "terahertz gap". [0003] In recent years, due to the rapid development of millimeter wave technology and infrared light technology, terahertz technology has attracted more and more attention and research. At present, terahertz technology and its application have become a research hotspot in the scientific community. Terahertz waves have many uni...

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Problems solved by technology

[0005] In recent years, terahertz detection and imaging based on NMOSFET has been proved to be very feasible, but due to the low gain and radiation efficiency of traditional on-chip terahertz antennas such as patches, and the low imaging resolution of single-pixel NMOSFET terahertz detectors, etc. Problems make it difficult for the current sensitivity and imaging resolution based on NMOSFET detection to meet the needs of practical applications. How to solve the above-mentioned technical problems that actually exist in the process of NMOSFET-based detection and imaging and improve the detection sensitivity and imaging resolution based on NMOSFET detection is an urgent need at present. Technical issues resolved

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