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Molded body for joining and method for manufacturing same

A technology of moldings and mixtures, which is used in semiconductor/solid-state device manufacturing, manufacturing tools, welding equipment, etc., and can solve the problem of difficult and high-strength semiconductor chip components being bonded to substrates.

Active Publication Date: 2019-11-01
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, regarding the Cu core Sn shell powder molded body described in Non-Patent Document 1, when a natural oxide film is formed on the surface of the Cu core Sn shell powder before molding, even if the molded body is placed on a semiconductor as a member to be joined Reflow is performed between the chip component and the substrate, and it is difficult for the Sn of the casing to infiltrate the surface of the Cu particles, and it is difficult to bond the semiconductor chip component to the substrate with high strength.

Method used

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  • Molded body for joining and method for manufacturing same
  • Molded body for joining and method for manufacturing same
  • Molded body for joining and method for manufacturing same

Examples

Experimental program
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Effect test

Embodiment 1

[0034] A Cu core Sn shell powder having an average particle diameter of 0.5 μm, a Cu ratio of 75% by mass, and a Sn ratio of 25% by mass was prepared. Here, the composition ratio of Cu and Sn of the Cu core Sn shell powder is measured by ICP emission spectrometry (manufactured by Thermo Fisher Scientific, iCAP-6500 Duo). In addition, the crystal structure of the core-shell structure was mainly composed of Cu and Sn, and it was confirmed by a powder X-ray diffraction method (manufactured by PANalytical, a multipurpose X-ray diffractometer Empyrean). Next, under a nitrogen atmosphere, the Cu core Sn shell powder was put into a mortar, and a general-purpose flux (92MS manufactured by Arakawa Chemical Industries, Ltd.) was added to the Cu core Sn shell powder and mixed uniformly for 30 minutes to obtain a mixture. In this mixture, the gaps between the Cu core Sn shell powder, that is, the inner walls of the closed pores and the open pores are covered with the active agent content. ...

Embodiment 2～5 and comparative example 1、2

[0036] In Examples 2 to 5 and Comparative Examples 1 and 2, as shown in Table 1, regarding the average particle size of the Cu core Sn shell powder used to make the bonding molded body, the average particle size of the Cu core Sn shell powder that is different from that of Example 1 was used. Cu core Sn shell powder, in the same manner as in Example 1, a molded body for joining was obtained.

Embodiment 6～9 and comparative example 3、4

[0038] In Examples 6 to 9 and Comparative Examples 3 and 4, as shown in Table 1, the Cu and Sn compositions of the Cu core Sn shell powder used to make the bonding molded body were Cu and Sn different from those in Example 1. The Cu core Sn shell powder having the composition of Sn was used in the same manner as in Example 1 to obtain a bonding molded body.

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Abstract

The present invention is a molded body (1) for joining constituted by an aggregate in which Cu-core Sn-shell powder has been compressed. There is an activating agent-containing substance (3) for removing oxides from surfaces of the powder in both open holes and closed holes present inside the molded body for joining. The molded body for joining contains 55-95 wt.% of Cu and 45-5 wt.% of Sn. The activating agent in the activating agent-containing substance is included in a ratio of 0.01-2 wt.% to 100 wt.% of the molded body for joining. The thickness is 20-400 [Mu]m.

Description

Technical field [0001] The present invention relates to a bonding molded body which is interposed between electronic components such as semiconductor chip components and LED chip components as bonded components and a substrate and is suitable for use when mounting electronic components as bonded components on a substrate, and a molded product thereof Production method. In addition, this international application claims priority based on Japanese Patent Application No. 71961 (Japanese Patent Application 2017-71961) filed on March 31, 2017, and the entire content of Japanese Patent Application 2017-71961 is used in this international application. . Background technique [0002] In recent years, wide band gap semiconductors such as SiC, which can operate at high temperatures exceeding 200°C, have attracted attention. As a bonding method for semiconductor chip components that work at high temperatures, a bonding method called Transient Liquid Phase Sintering (TLP method) is attract...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/14B22F1/00B22F1/02B23K35/26B23K35/40B22F1/17
CPCB23K35/40B23K35/0244B23K35/262B23K35/302B22F2003/1106B22F3/11B22F7/002B22F2998/10B22F2999/00H01L23/142H01L21/4871B22F1/17B22F3/02B22F3/18B22F2201/10B22F2201/02C22C9/10
Inventor 樋上晃裕村冈弘树岩田广太郎山口朋彦
Owner MITSUBISHI MATERIALS CORP
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