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Phononic crystal-based film bulk acoustic resonator

A thin-film bulk acoustic wave and phononic crystal technology, which is applied in the field of resonators, can solve the problems of inability to reflect transverse shear waves, low device quality factor, and inability to reflect longitudinal waves, so as to reduce losses, reduce transverse shear waves, The effect of improving power capacity

Active Publication Date: 2019-11-05
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the reflection of the sound wave depends on the Bragg reflection between the films, the longitudinal wave cannot be completely reflected, let alone the transverse shear wave, so the quality factor (Q value) of the device is not high, and the sound wave loss is relatively large.

Method used

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  • Phononic crystal-based film bulk acoustic resonator
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  • Phononic crystal-based film bulk acoustic resonator

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Embodiment 1

[0022] Such as figure 1 As shown, the thin-film bulk acoustic resonator 10 based on phononic crystals of the present invention includes a substrate 110, the substrate material is high-resistance silicon; it includes a phononic crystal layer 140 formed on the front side of the substrate, formed on the phononic crystal The piezoelectric oscillator stack structure 180 on the layer 140; wherein the phononic crystal layer includes multiple layers of phononic crystals arranged periodically, and each layer of phononic crystals is arranged alternately and periodically with scatterers and substrates of different materials, such as scatterers 130 The material can be silicon dioxide, air and other low-sonic materials, and the material of the substrate 120 can be high-sonic materials such as tungsten, high-resistance silicon, and aluminum nitride; in this embodiment, the scatterer structure in the phononic crystal is a cuboid, The matrix structure is also a cuboid; in the present inventio...

Embodiment 2

[0024] Such as figure 2 As shown, the thin-film bulk acoustic resonator 10 based on phononic crystals of the present invention includes a substrate 110, the substrate material is high-resistance silicon; it includes a phononic crystal layer 140 formed on the front side of the substrate, formed on the phononic crystal The piezoelectric oscillator stack structure 180 on the layer 140; wherein the phononic crystal layer includes multiple layers of phononic crystals arranged periodically, and each layer of phononic crystals is arranged alternately and periodically with scatterers and substrates of different materials, such as scatterers 130 The material can be silicon dioxide, air and other low-sonic materials, and the material of the substrate 120 can be high-sonic materials such as tungsten, high-resistance silicon, and aluminum nitride; the scatterer structure in the phononic crystal described in this embodiment is regular hexagonal In the present invention, the phononic cryst...

Embodiment 3

[0026] Such as Figure 3-4 As shown, the thin-film bulk acoustic resonator 10 based on phononic crystals of the present invention includes a substrate 110, the substrate material is high-resistance silicon; it includes a phononic crystal layer 140 formed on the front side of the substrate, formed on the phononic crystal The piezoelectric oscillator stack 180 on the layer 140; wherein the phononic crystal layer includes multiple layers of phononic crystals arranged periodically, and each layer of phononic crystals is arranged alternately and periodically with scatterers and substrates of different materials, such as the scatterer 130 material Low-sonic materials such as silicon dioxide and air can be selected, and high-sonic materials such as tungsten, high-resistance silicon, and aluminum nitride can be selected as the material of the substrate 120; the scatterer structure in the phononic crystal described in this embodiment is a regular hexagon Cylinder, the matrix structure ...

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Abstract

The invention provides a phononic crystal-based film bulk acoustic resonator. The phononic crystal-based film bulk acoustic resonator comprises: a substrate; the phononic crystal layer, wherein phononic crystals are deposited on the surface of the substrate in an overlapping manner, the scatterers are periodically arranged in the base material, and the material of the scatterers is different fromthat of the base material; and a piezoelectric oscillation stack layer which comprises a bottom electrode, a piezoelectric material film and a top electrode from bottom to top. According to the invention, the reflection of longitudinal waves in the film bulk acoustic resonator is enhanced by utilizing the material structure design, and the loss of transverse shear waves is reduced. The scatterer can shield sound waves within a specific working frequency range, the sound waves corresponding to the working frequency are completely reflected, transverse shear waves are reduced, and the Q value ofthe resonator is increased. In addition, the film bulk acoustic resonator based on the photonic crystal does not need to be provided with a cavity structure on the substrate, the stability of the resonator is enhanced, meanwhile, heat generated by the resonator can be effectively transmitted and dissipated through the photonic crystal, the heat dissipation capacity of the resonator is enhanced, and the power capacity of the resonator is improved.

Description

technical field [0001] The invention relates to the technical field of resonators, in particular to a thin-film bulk acoustic wave resonator based on phononic crystals. Background technique [0002] With the rapid development of wireless communication, wireless signals are becoming more and more crowded, and new requirements such as integration, miniaturization, low power consumption, high performance, and low cost are put forward for filters working in the radio frequency band. Traditional surface acoustic wave resonators cannot meet such technical indicators due to limitations in frequency and power. Film Bulk Acoustic Resonator (FBAR) has gradually become a hot spot in the research of RF filters due to its characteristics of CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capacity. [0003] The film bulk acoustic resonator uses the piezoelectric effect of the piezoelectric film to apply an electric...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17
CPCH03H3/02H03H9/02015H03H9/02102H03H9/0211H03H9/174H03H2003/023
Inventor 谢英孙成亮蔡耀王雅馨刘炎高超
Owner 武汉敏声新技术有限公司
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