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LED vertical chip based on silicon substrate and preparation method thereof

A silicon substrate and chip technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unstable yield rate, complex process, easy damage, etc., to reduce technical threshold and cost, avoid complex process, and improve current distribution effect

Pending Publication Date: 2019-11-08
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The process of the two parts is relatively complicated, the conditions are relatively harsh, the bonding process is prone to large warpage, and the laser lift-off is easy to damage the GaN on the surface of the LED chip, resulting in problems such as fragmentation, leakage, and unstable yield, and the equipment cost is high. , affecting the further promotion and application of LED vertical chips

Method used

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  • LED vertical chip based on silicon substrate and preparation method thereof
  • LED vertical chip based on silicon substrate and preparation method thereof
  • LED vertical chip based on silicon substrate and preparation method thereof

Examples

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preparation example Construction

[0057] A method for preparing an LED vertical chip based on a silicon substrate, comprising the following steps:

[0058] A. growing an epitaxial layer on a silicon substrate;

[0059] The epitaxial layer includes an N-type layer, a light-emitting layer and a P-type layer, and the size of the silicon substrate is 2-8 inches.

[0060] The epitaxial layer is grown on the silicon substrate by MOCVD process.

[0061]B. Prepare the current diffusion layer and the current blocking layer by photolithography on the epitaxial layer;

[0062] The material of the current diffusion layer includes one or more of indium tin oxide (ITO), fluorine tin oxide (FTO) and aluminum zinc oxide (AZO), with a thickness of 25-500nm.

[0063] Current blocking layer materials include silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), titanium dioxide (TiO 2 ), with a thickness of 60-300nm.

[0064] C. prepare passivation layer and positive electrode further by photolithography;

[0065] The p...

Embodiment 1

[0080] A method for preparing an LED vertical chip based on a silicon substrate, comprising the following steps:

[0081] A. An epitaxial layer 12 is grown on a silicon substrate 11; the silicon substrate is a 4-inch silicon wafer, and the epitaxial layer 12 is composed of an N-type layer, a light-emitting layer, and a P-type layer, with a total thickness of 4.5 μm. The epitaxial layer 12 adopts MOCVD process grown on a silicon substrate 11, such as figure 1 shown;

[0082] B. On the epitaxial layer 12, first deposit the current diffusion layer 13, preferably indium tin oxide (ITO), with a thickness of 80nm, and use photolithography to open the ITO, leaving the position of the current blocking layer 14; then deposit the current blocking layer 14 , preferably silicon dioxide (SiO 2 ), formed by PECVD plasma reaction deposition, with a thickness of 200nm, and using photolithography to pattern the current blocking layer 14, such as figure 2 shown;

[0083] C. Further photoli...

Embodiment 2

[0090] A method for preparing an LED vertical chip based on a silicon substrate, comprising the following steps:

[0091] The preparation steps are the same as in Example 1, except that:

[0092] In step E, the silicon substrate 11 is photolithographically prepared to have different shapes of through holes, preferably square, and the periodic array is 3x3, such as Figure 10 shown.

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Abstract

The invention belongs to the technical field of semiconductor light-emitting devices, and relates to an LED vertical chip with a silicon substrate and a preparation method of the LED vertical chip. The LED vertical chip based on the silicon substrate comprises a back metal layer, a metal through hole layer, the silicon substrate, an epitaxial layer, a current diffusion layer, a current blocking layer, a passivation layer and a positive electrode which are arranged in sequence, wherein the back metal layer and the metal through hole layer jointly form a negative electrode; the metal through hole layer comprises a through hole, a metal seed layer and through hole filling metal; the metal through hole layer connects the back metal layer with the epitaxial layer to form an LED vertical structure with the back negative electrode and the top positive electrode. According to the LED vertical chip preparation method, a substrate transfer process is omitted, and the problems of complex process,unstable yield and the like in the substrate transfer process are avoided; compared with a normal LED chip and an inverted LED chip in the existing market, the LED vertical chip solves the problem ofcurrent congestion in transverse current transmission, and the advantage of vertical current transmission in the vertical structure chip is reserved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting devices, and relates to a silicon substrate LED vertical chip and a preparation method thereof. Background technique [0002] Since its birth, light-emitting diodes (LEDs) have played an increasingly important role in people's daily lives and are widely used in lighting, display, plant growth, optical communications and other fields. As the most basic component in LED devices-LED chips, they are The key to determining the performance of LED devices. LED chips were initially developed in the form of front mounting, but the front electrodes blocked the light output, and the light output efficiency could not be maximized. Later, flip-chip LED chips were developed to allow the light to be emitted from the back, but there is still a current crowding effect, which cannot fully meet the requirements of high-power chips. . As a result, vertical LED chips came into being. Vertical cu...

Claims

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Application Information

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IPC IPC(8): H01L33/38H01L33/00
CPCH01L33/382H01L33/38H01L33/0054H01L2933/0016
Inventor 李宗涛颜才满汤勇徐亮卢汉光伍科健丁鑫锐
Owner SOUTH CHINA UNIV OF TECH
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