Forming method of semiconductor device

Abstract

The invention provides a forming method of a semiconductor device, which includes the following steps: a substrate is placed in a reaction cavity; reaction gases are introduced into the reaction cavity to generate a silicon oxynitride layer on the substrate; and the introduction of the reaction gases is stopped immediately after the silicon oxynitride layer meets the control requirements, and thereaction cavity is not cleaned, so as to make the density of charges on the surface of the silicon oxynitride layer greater than a set value and to neutralize a high-density and high-energy plasma generated when a dielectric layer is formed by a subsequent high-density plasma chemical vapor deposition process as much as possible. Therefore, the ability of the silicon oxynitride layer to resist theplasma is enhanced, and the damage of the plasma can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for forming a semiconductor device. Background technique [0002] Storage devices are devices used to store a large amount of digital information. In recent years, the advancement of process technology and market demand have spawned more and more high-density storage devices of various types. Among them, non-volatile memory devices (Non-volatile memory, NVM ) can still maintain data information when the system is turned off or there is no power supply. The floating gate memory device is a kind of non-volatile memory. Data information can still be maintained under the circumstances, so it is widely used in various commercial and military electronic devices and equipment. [0003] The steps of forming a floating gate memory device generally include: providing a substrate in which a source / drain is formed, and a gate structure is formed on the substrate, ...

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Problems solved by technology

[0004] With the shrinking of the size of semiconductor devices, the distance between two adjacent gate structures of floating gate memory devices is very small, resulting in a large aspect ratio of the opening formed between two adjacent gate structures. layer can better fill the openings formed between two adjacent gate structures, usually it is necessary to use a high-density plasma chemical vapor deposition process to form the dielectric layer, and, in order to meet a larger aspect ratio (for example, greater than 3) Filling requirements, the power of the high-density plasma chemical vapor deposition process is also gradually increasing, causing the high-density plasma chemical vapor deposition process to produce high-density, high-energy charged plasma bombardment of nitrogen during the filling process On the surface of the silicon oxide layer, these charged plasmas can pass through the silicon oxynitride layer and the control gate layer and floating gate layer of the gate structure, causing irreversible damage to the gate oxide layer, resulting in problems with the reliability of the device

However, if the power of the high-density plasma chemical vapor deposition process is reduced, its filling ability will be affected, so that holes will be generated in the dielectric layer, and subsequently contact holes will be formed to connect the source / drain / gate, due to the The holes in the dielectric layer are prone to dielectric breakdown, which may lead to the connection between the contact holes, forming a short circuit of the circuit, resulting in a decrease in device yield

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