Scattering parameter measurement method and device calibration method

Abstract

A scattering parameter measurement method and a device calibration method. The measurement method comprises: preparing N standard components, the standard components comprising GSG pads and transmission lines of unique lengths LN; measuring scattering parameters SN for the N standard components; converting the scattering parameters SN into ABCD parameters; constructing, according to variables Z1 and Y2, an ABCD matrix for the GSG pads of the standard structural components; constructing, according to variables γ and Z0, ABCD matrices for the transmission lines of lengths LN of the standard components; constructing ABCD matrices for the standard components; solving for variables Z1, Y2 and / or variables γ, Z0; obtaining an ABCD parameter for the GSG pads and / or an ABCD parameter for any transmission line of length LX; converting the ABCD parameter into a scattering parameter S. By means of scattering parameters for at least two transmission lines of different lengths, scattering parameter measurement for the GSG pads and a transmission line of any length can be achieved and measurement precision increased, adding flexibility in scattering parameter measurement, and the scattering parameters obtained from measurement can be widely applied to device calibration.

Description

Technical field [0001] The invention belongs to the technical field of radio frequency and microwave, and specifically relates to a scattering parameter measurement method and a device calibration method. Background technique [0002] RF chips are widely used in modern communication systems. For example, base stations use LDMOS (laterally diffused metal oxide semiconductor) or GaN (gallium nitride) chips to amplify communication signals, and mobile phone terminals use GaAs (gallium arsenide) chips, etc. Wireless signal transmission and reception. Compared with the previous generation, the communication capacity of each new generation of communication technology has been greatly improved. In order to carry such fast data transmission, the operating frequency of the radio frequency chip also needs to be continuously increased, which brings challenges to chip design and packaging. RF and millimeter wave chip design is inseparable from EDA (Electronic Design Automation) software, an...

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Problems solved by technology

[0003] In the prior art, Through-Line-Reflect (Through-Line-Reflect, referred to as TRL) is a common calibration algorithm in the field of microwave and radio frequency. Its advantage is that it can calibrate out any connectors and cables. The frequency range is limited, and the calibration of the entire frequency band cannot be covered, and for low-frequency applications, the structural component Line of TRL will be very long. If it is calibrated on-chip, it will occupy a large amount of wafer area, thereby increasing the cost; OPEN-SHORT ( The open-circuit and short-circuit method (OS method for short) is a lumped parameter calibration algorithm. Its principle is to characterize the open-circuit and short-circuit structure as a lumped parameter equivalent model. This characterization method is only valid when the frequency is low. When the frequency When the contact line of the chip is relatively high, or the contact line of the chip is very long, the calibration accuracy of this method is not ideal; L-2L (transmission line L and 2L method, referred to as L-2L) is a calibration algorithm commonly used in the field of microwave radio frequency, L The disadvantage of -2L is that you need to provide transmission lines with lengths L and 2L respectively, for other lengths of transmission lines, this method is not applicable

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