Displacement Irradiation Resistance Method of Gallium Oxide Schottky Diode Based on Deep Ion Implantation
A Schottky diode and ion implantation technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of forward and reverse characteristic degradation, poor resistance to displacement and radiation, and achieve radiation resistance Ability to improve, improve radiation resistance, and maintain a stable effect
Active Publication Date: 2022-03-25
HARBIN INST OF TECH
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[0005] Aiming at the problem that the existing Gallium Oxide Schottky diode has poor anti-displacement irradiation ability in the charged particle irradiation environment, which easily causes the degradation of its forward and reverse characteristics, the present invention provides a Gallium Oxide Schottky diode based on deep ion implantation. Base diode anti-displacement irradiation method
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[0033] Specific implementation mode 1. Combination figure 1 and figure 2 As shown, the present invention provides a method for anti-displacement irradiation of gallium oxide Schottky diodes based on deep ion implantation, comprising the following steps:
[0034] Step 1: According to the original Ga 2 o 3 The structural parameters of the Schottky diode determine the position of the ion to be implanted, and determine the energy and range of the ion according to the position to be implanted;
[0035] Step 2: Simulating implanting the ions into the original Ga 2 o 3 Schottky diodes to be implanted and to obtain Ga 2 o 3 Schottky diode forward and reverse target characteristic change curve, the change amount of the recorded target characteristic change curve is smaller than that of the original Ga 2 o 3 The amount of ion implantation when the Schottky diode forward and reverse characteristic change curve is 10%;
[0036] Step 3: Calculate the ion source voltage, ion beam ...
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The invention relates to a method for anti-displacement irradiation of a gallium oxide Schottky diode based on deep ion implantation, which belongs to the technical field of diode microelectronics. The invention aims at the problem that the existing gallium oxide schottky diode has poor anti-displacement irradiation ability in the charged particle irradiation environment, which easily causes the degradation of its forward and reverse characteristics. It is based on the original Ga 2 o 3 The structural parameters of the Schottky diode, determine the position of the ion to be implanted, and simulate the energy and range of the ion; and then simulate to obtain the Ga after ion implantation 2 o 3 Schottky diode forward and reverse target characteristic change curve, the change amount of the recorded target characteristic change curve is smaller than that of the original Ga 2 o 3 The amount of ion implantation when the Schottky diode forward and reverse characteristic change curve is 10%; then calculate the ion source voltage, ion beam current and ion implantation time of the ion implanter; set up the ion implanter, for the original Ga 2 o 3 Schottky diodes are ion-implanted and annealed. The invention is used for reinforcement of gallium oxide schottky diodes.
Description
technical field [0001] The invention relates to a method for anti-displacement irradiation of a gallium oxide Schottky diode based on deep ion implantation, and belongs to the technical field of diode microelectronics. Background technique [0002] It has become a new hotspot in the field of semiconductors to find a new type of semiconductor material with unique physical and electrical properties that can meet the requirements of strong radiation and high temperature harsh environments such as aerospace and nuclear reactors. In recent years, gallium oxide (Ga 2 o 3 ) has developed rapidly and has become one of the research hotspots in the field of radiation resistance. Ga 2 o 3 The wide bandgap and high atomic critical displacement energy of the material determine that the device has strong resistance to electromagnetic wave shock and high resistance to radiation damage. If Ga 2 o 3 The structural parameters of the device can be further optimized, and its anti-irradia...
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IPC IPC(8): H01L21/425H01L21/477
CPCH01L21/425H01L21/477
Inventor 王天琦张延清齐春华马国亮刘超铭王新胜李何依周佳明霍明学
Owner HARBIN INST OF TECH