Bismuth nanowire with thickness of 1.5 nm and preparation method and application thereof

A technology of bismuth nanometer and bismuth chloride, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of low Faradaic efficiency, high overpotential, etc., and achieve the effect of excellent catalytic reduction performance

Inactive Publication Date: 2019-11-22
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of high overpotential and low Faradaic efficiency in existing CO2 catalysts, and to provide a kind of thickness of 1.5nm bismuth nanowires and its preparation method and application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bismuth nanowire with thickness of 1.5 nm and preparation method and application thereof
  • Bismuth nanowire with thickness of 1.5 nm and preparation method and application thereof
  • Bismuth nanowire with thickness of 1.5 nm and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Weigh 1mmol of bismuth chloride, add it to 100mL of ethylene glycol ether solution, stir ultrasonically until the solution is clear, and place it in an oil bath; then, under the protection of inert gas, raise the temperature to 80°C and stir for 30min, add 0.05 mmolNaI solution, then heated up to 160 ° C for 30 minutes, cooled to room temperature, placed in an ultrasonic instrument to stir and ultrasonically, and at the same time, quickly added 50 mmol high-concentration NaBH 4 The reducing solution forms a black-gray dispersion; after that, it is collected by filtration and washing three times with ethanol and water, and finally placed in a vacuum oven at 50° C. to dry overnight to obtain 1.5 nm-thick Bi nanowires.

[0027] figure 1 It is a transmission electron microscope image of different magnifications of the bismuth nanowires synthesized in Example 1 of the present invention. It can be seen from the images that the material synthesized by this method presents an u...

Embodiment 2

[0030] Weigh 1 mmol of bismuth chloride, add it to 100 mL of ethylene glycol ether solution, stir ultrasonically until the solution is clear, and place it in an oil bath; then, under the protection of an inert gas, raise the temperature to 60°C and stir for 30 minutes, add 0.05 mmolNaI solution, then heated up to 140 ° C for 30 minutes, cooled to room temperature, placed in an ultrasonic instrument to stir and sonicate, and at the same time, quickly added 50 mmol high-concentration NaBH 4 The reducing solution forms a black-gray dispersion; after that, it is collected by filtration and washing three times with ethanol and water, and finally placed in a vacuum oven at 50° C. to dry overnight to obtain 1.5 nm-thick Bi nanowires.

Embodiment 3

[0032] Weigh 3 mmol of bismuth chloride, add it to 200 mL of ethylene glycol ether solution, stir ultrasonically until the solution is clear, and place it in an oil bath; then, under the protection of an inert gas, raise the temperature to 80°C and stir for 40 minutes, add 0.05 mmolNaI solution, then heated up to 160 ° C for 40 minutes, cooled to room temperature, placed in an ultrasonic instrument to stir and ultrasonically, and at the same time quickly added 60 mmol high-concentration NaBH 4 The reducing solution forms a black-gray dispersion; after that, it is collected by filtration and washing three times with ethanol and water, and finally placed in a vacuum oven at 50° C. to dry overnight to obtain 1.5 nm-thick Bi nanowires.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a bismuth nanowire with the thickness of 1.5 nm and a preparation method and application thereof, and belongs to the technical field of nanowire preparation methods. The methodcomprises the following steps: adding bismuth chloride into an ethylene glycol ethyl ether solution; ultrasonically stirring uniformly until the solution is clear, placing the solution in an oil bath,heating to react under the protection of inert gas, then adding a NaI solution, heating to react, cooling to normal temperature, and placing in an ultrasonic instrument for stirring and ultrasonically treating; and meanwhile, quickly adding a NaBH4 reducing solution to obtain the bismuth nanowire with the thickness of 1.5 nm. The invention also provides the bismuth nanowire with the thickness of1.5 nm obtained by the preparation method. The invention also provides an application of the bismuth nanowire with the thickness of 1.5 nm in electrocatalytic reduction of CO2. According to the Bi nanowire material disclosed by the invention, the Faraday efficiency of generating formic acid can be maintained at 85% or above under a wide-spectrum window of-0.48 V vs.RHE to -0.98 V vs.RHE.

Description

technical field [0001] The invention belongs to the technical field of nanowire preparation methods, and in particular relates to a bismuth nanowire with a thickness of 1.5nm and its preparation method and application. Background technique [0002] With the rapid development of industry, the use of a large amount of fossil fuels has led to a sharp increase in the concentration of carbon dioxide in the atmosphere, which has caused a series of environmental problems, such as the greenhouse effect, desertification, and global warming. Electrochemical carbon dioxide reduction reaction (CO 2 RR) Using renewable energy sources (such as solar energy, wind energy, and tidal energy, etc.) to generate electricity to drive reactions to convert carbon dioxide into high value-added chemical products, such as methane, formic acid, ethanol, etc., is the most promising way to alleviate related environmental crises One of the methods is conducive to the realization of a real carbon cycle. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/18B01J35/06C25B11/06C25B3/04B22F1/00B22F9/24B82Y30/00B82Y40/00C25B3/25
CPCB01J23/18B01J35/0033B01J35/06B22F9/24B82Y30/00B82Y40/00C25B3/25C25B11/057C25B11/051C25B11/075B22F1/0547
Inventor 徐维林杨发阮明波宋平杨吉
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap