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Electroplating copper solution and electroplating method for wafer-level packaging super TSV copper interconnection material

A wafer-level packaging, copper interconnect technology, applied in the field of materials, can solve problems such as high resistance, super TSV filling voids, and gaps

Active Publication Date: 2019-12-06
SHENZHEN CHENGGONG CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the deficiencies in the above-mentioned technologies, the present invention provides a copper electroplating solution and electroplating method for super TSV copper interconnection materials in wafer-level packaging, which solves the problems of voids and cracks in the filling of existing super TSVs, and can effectively Prevent the shortcomings of unstable signal transmission, large resistance, and excessive power loss due to voids, and further improve the reliability of electronic products

Method used

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  • Electroplating copper solution and electroplating method for wafer-level packaging super TSV copper interconnection material
  • Electroplating copper solution and electroplating method for wafer-level packaging super TSV copper interconnection material
  • Electroplating copper solution and electroplating method for wafer-level packaging super TSV copper interconnection material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] The formula consists of the following:

[0072] Concentrated copper sulfate pentahydrate: 200g / L;

[0073] Concentrated sulfuric acid: 50g / L;

[0074] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0075] 3-sulfur-isothiourea propanesulfonic acid inner salt: 4mg / L;

[0076] Nonylphenol polyoxyethylene ether: 60mg / L;

[0077] Phenazine dye: 80mg / L;

[0078] Solution preparation process: Take 1L solution as an example, take 300ml of water, add concentrated copper sulfate pentahydrate: 200g; 0.004g; nonylphenol polyoxyethylene ether: 0.06g; phenazine dye: 0.08g, stir to dissolve, and then add water to the liquid level to 1L.

[0079] Process parameters for electroplating using the copper electroplating solution prepared in this example: pretreatment vacuuming: 10min, solution exchange time: 10min, temperature: 25±2°C, current density: 0.3A / dm 2 , the stirring rate is 200r / min; after the elect...

Embodiment 2

[0082] The formula consists of the following:

[0083] Concentrated copper sulfate pentahydrate: 220g / L;

[0084] Concentrated sulfuric acid: 60g / L;

[0085] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0086] 3-sulfur-isothiourea propanesulfonic acid inner salt: 2mg / L;

[0087] Nonylphenol polyoxyethylene ether: 60mg / L;

[0088] Diphenylmethane dye: 60mg / L;

[0089] Solution preparation process: Take 1L solution as an example, take 300ml of water, add concentrated copper sulfate pentahydrate: 220g; 0.002g; nonylphenol polyoxyethylene ether: 0.06g; diphenylmethane dye: 0.06g, stir to dissolve, and then add water to the liquid level to 1L.

[0090] Process parameters for electroplating using the copper electroplating solution prepared in this example: pre-treatment vacuuming: 10 min, solution exchange time: 10 min, temperature: 25±2°C, current density: 0.25A / dm 2 , the stirring rate is 150r / min,...

Embodiment 3

[0093] The formula consists of the following:

[0094] Concentrated copper sulfate pentahydrate: 240g / L;

[0095] Concentrated sulfuric acid: 50g / L;

[0096] Chloride ion: 40mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0097] 3-sulfur-isothiourea propanesulfonic acid inner salt: 4mg / L;

[0098] Nonylphenol polyoxyethylene ether: 60mg / L;

[0099] Phenazine dye: 70mg / L;

[0100] Solution preparation process: Take 1L solution as an example, take 300ml of water, add concentrated copper sulfate pentahydrate: 240g; 0.004g; nonylphenol polyoxyethylene ether: 0.06g; phenazine dye: 0.07g, stir to dissolve, then add water to the liquid level to 1L.

[0101] Process parameters for electroplating using the copper electroplating solution prepared in this example: pretreatment vacuuming: 10 min, solution exchange time: 10 min, temperature: 25±2°C, current density: 0.18A / dm 2 , the stirring rate is 200r / min, after the electr...

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Abstract

The invention discloses an electroplating copper solution and electroplating method for a wafer-level packaging super TSV copper interconnection material. The electroplating copper solution comprises,according to the concentration, 100-250 g / L of concentrated copper sulfate pentahydrate, 40-80 g / L of concentrated sulfuric acid, 30-50 mg / L of chloride ions, 1-5 mg / L of 3-sulfur-isothiourea propanesulfonic acid inner salt, 50-100 mg / L nonylphenol polyoxyethylene ether, 40-80 mg / L of phenazine dye and the balance DI pure water; the components are uniformly mixed to form the electroplating coppersolution; before electroplating, the wafer is subjected to vacuum treatment by a pretreatment solution; the pretreatment solution is DI pure water, and the wafer is vacuumized by using DI pure waterin vacuum equipment for 5-10 min after the wafer is mounted by an electroplating hanger; and after vacuumizing, electroplating is carried out in the electroplating copper solution. The super TSV growsin the bottom-up form, so that the problems of voids, cracks and the like of existing super TSV are solved, and the defects of unstable signal transmission, large resistance, excessive power loss andthe like due to voids can be effectively avoided.

Description

technical field [0001] The invention relates to the field of materials, in particular to an electroplating copper solution and an electroplating method for super TSV copper interconnection materials for wafer-level packaging. Background technique [0002] As integrated circuit manufacturing technology enters the stage of tens of nanometers, the capacitance-resistance delay of thinner and longer metal interconnection lines can no longer be ignored. Copper with lower resistivity and low dielectric constant dielectric with lower dielectric constant are generally used in the industry to reduce the RC delay of interconnection lines. IBM announced a major change in interconnection technology in 1997 - the copper interconnection Damascus process, which is currently mainly used in the embedded process used in the international copper wiring technology route. This process can deposit void-free and crack-free copper filling in blind holes, maximize the density of chips stacked in thr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D7/12H01L21/768
CPCC25D3/38C25D7/12H01L21/76838
Inventor 姚吉豪孙道豫姚玉
Owner SHENZHEN CHENGGONG CHEM
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