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Vertical conduction gallium nitride power diode and preparation method thereof

A technology of power diodes and gallium nitride, which is applied in the direction of diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of limiting current vertical conduction and non-adjustable stress, so as to improve device performance and withstand voltage performance Effect

Pending Publication Date: 2019-12-10
宁波铼微半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention provides a vertical conduction gallium nitride power diode to solve the technical problem that the high-resistance buffer layer in the existing power diode limits the vertical conduction of the current and the stress cannot be adjusted

Method used

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  • Vertical conduction gallium nitride power diode and preparation method thereof
  • Vertical conduction gallium nitride power diode and preparation method thereof
  • Vertical conduction gallium nitride power diode and preparation method thereof

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Embodiment 1

[0054] Such as figure 1 and image 3As shown, a vertical conduction gallium nitride power diode, the epitaxy of the diode includes a substrate 1, and a nucleation layer 2, a superlattice stress buffer layer 3, a GaN Drift layer 4, mask layer 5; substrate 1, nucleation layer 2, superlattice stress buffer layer 3, GaN drift layer 4, mask layer 5 together constitute the epitaxial growth part of the diode, substrate 1 and GaN drift layer 4 is also provided with a first electrode 7 and a second electrode 8 with different electrical contacts by means of deposition, preferably, the first electrode 7 is a cathode, and the second electrode 8 is an anode.

[0055] The substrate 1 is a silicon substrate with low resistance, and the silicon substrate is used, and its cost is lower than that of substrates made of other materials;

[0056] The superlattice stress buffer layer 3 is an AlN / GaN superlattice, the thickness of the superlattice stress buffer layer 3 is 0.1nm-100nm, and the AlN / ...

Embodiment 2

[0077] This embodiment is another embodiment of the diode of the vertical conductor in Embodiment 1, such as figure 2 As shown, in this embodiment, the first groove 51 provided on the mask layer 5 also cuts into the inside of the GaN drift layer 4 but does not penetrate the GaN drift layer 4, so that the field limiting ring 6 and the GaN drift The contact area of ​​the layer 4 is larger, which can better conduct the contact with the GaN drift layer 4, so that the breakdown voltage can be further improved.

[0078] It should be pointed out that the first groove 51 mentioned here is cut into the inside of the GaN drift layer 4, which means that the first groove is etched in the mask layer 5 by photolithography and development technology and wet etching method. A groove continues to be etched in the GaN drift layer 4 after penetrating the mask layer 5 , thereby achieving the effect of cutting the first groove 51 into the GaN drift layer 4 .

[0079] and, if Figure 4 to Figure...

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Abstract

The invention relates to a vertical conduction gallium nitride power diode and a preparation method thereof, and belongs to the technical field of power diodes. The vertical conduction diode comprisesa substrate, and a nucleating layer, a superlattice stress buffer layer, a GaN drift layer and a mask layer which are sequentially grown on the substrate, wherein a first electrode and a second electrode, which are different in electrical contact, are respectively deposited on the substrate and the GaN drift layer. According to the invention, the vertical conduction diode is provided with the superlattice stress buffer layer, the superlattice stress buffer layer can realize stress regulation and control of the GaN drift layer in the vertical conduction and epitaxial process of the substrate,and the breakdown voltage of the diode is improved by additionally arranging a field limiting ring structure.

Description

technical field [0001] The invention belongs to the field of power diodes, in particular to a vertical conduction gallium nitride power diode and a preparation method thereof. Background technique [0002] Power devices play the role of electrical switches in electrical energy conversion and control circuits. At present, the performance of traditional silicon-based devices is gradually approaching the theoretical limit of their materials, and it is difficult to meet the growing needs of modern power systems. The wide bandgap semiconductor material represented by gallium nitride (GaN) has a high critical breakdown electric field and can achieve lower capacitance and on-resistance at the same breakdown voltage, and is recognized as an ideal next-generation power device material. GaN power devices are the supporting technology for key development areas such as power equipment, new energy vehicles, and rail transit in "Made in China 2025". It is not only the frontier of interna...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/15H01L29/06H01L21/329
CPCH01L29/872H01L29/157H01L29/155H01L29/0619H01L29/66212
Inventor 敖金平李柳暗
Owner 宁波铼微半导体有限公司
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