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Polyimide/silica composite material and preparation method thereof

A polyimide and silica technology, applied in coating, fiber treatment, textiles and papermaking, etc., can solve the problem of difficulty in coating silica, and achieve the effect of improving antigenic oxygen capacity and maintaining mechanical properties.

Active Publication Date: 2019-12-17
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation method of a polyimide / silicon dioxide composite material and its preparation method in order to overcome the difficulty in coating silicon dioxide on a base material with a large specific surface area in the prior art. Material

Method used

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  • Polyimide/silica composite material and preparation method thereof
  • Polyimide/silica composite material and preparation method thereof
  • Polyimide/silica composite material and preparation method thereof

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preparation example Construction

[0031] The first aspect of the present invention provides a kind of preparation method of polyimide / silicon dioxide composite material, and this method comprises the following steps:

[0032] (1) contacting the polyimide matrix with lye to obtain the polyimide matrix treated with lye;

[0033] (2) The dispersion liquid containing the silicon source is placed in the reactor, the polyimide substrate treated with alkali solution is placed above the dispersion liquid, the reactor is closed, and the temperature of the dispersion liquid is raised to a reaction temperature of 100-160°C, preferably raising the temperature of the dispersion to a reaction temperature of 110-150°C, and keeping at the reaction temperature for 2-24 hours, preferably 3-20 hours, more preferably 10-20 hours;

[0034] (3) heat-treating the polyimide matrix obtained in step (2).

[0035] According to the method of the present invention, in step (1), the polyimide matrix is ​​contacted with the lye, so that th...

Embodiment 1

[0065] (1) Put the polyimide fiber in deionized water and ultrasonically clean it for 30 minutes to remove impurities on the surface of the substrate. After drying, immerse it in a 5mol / L potassium hydroxide aqueous solution at room temperature (25°C, the same below). ℃ water bath at constant temperature for 4 minutes, then rinse with a large amount of deionized water to remove the potassium hydroxide attached to the surface, and dry in the air; after the lye treatment, the imide bond on the fiber surface is hydrolyzed to produce amide groups and carboxyl-COO -. The polyimide fiber used as raw material and the polyimide fiber treated with potassium hydroxide were characterized by infrared, and the results were as follows: Figure 1a As shown, compared with the polyimide fiber as raw material, the amide structure absorption peak appeared in the infrared spectrogram of the polyimide fiber treated with potassium hydroxide, and the symmetrical stretching peak of the carbonyl of the...

Embodiment 2

[0069] (1) Put the polyimide film in deionized water and ultrasonically clean it for 20 minutes to remove impurities on the surface of the substrate. After drying, immerse it in 7mol / L potassium hydroxide aqueous solution at room temperature, and treat it at a constant temperature in a water bath at 30°C for 8 minutes, then Rinse with plenty of deionized water to remove potassium hydroxide adhering to the surface, and air dry. The polyimide film as raw material and the polyimide film treated with potassium hydroxide were characterized by infrared, as shown in Figure 2a As shown, compared with the polyimide film as raw material, the amide structure absorption peak appears in the infrared spectrogram of the polyimide film treated with potassium hydroxide, and the symmetrical stretching peak of the carbonyl of the imine ring decreases simultaneously, It shows that the imine ring opens, indicating that carboxyl -COO- is formed on the surface of the polyimide film treated with pot...

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Abstract

The invention relates to the technical field of polymer materials, and discloses a method for preparing a polyimide / silica composite material and the material prepared by the method. The method comprises the steps that a polyimide substrate is in contact with an alkali solution to obtain the polyimide substrate treated with by the alkali solution; a dispersion solution containing a silicon sourceis placed in a reactor, the polyimide substrate treated with by the alkali solution is placed above the dispersion solution, the reactor is closed, the temperature of the dispersion solution is raisedto a reaction temperature of 100-160 DEG C, and the temperature is maintained for 2-24 hours; the obtained polyimide substrate is subjected to thermal treatment. According to the method for preparingthe polyimide / silica composite material, a uniformly grown silica layer can be formed on the surfaces of substrate materials such as a polyimide film and a polyimide fiber and a nanofiber film whichhave larger specific surface areas, so that not only are mechanical properties of the polyimide material itself maintained, but also the improvement of the antigenic oxygen capacity of the surface ofthe polyimide material is facilitated.

Description

technical field [0001] The invention relates to the technical field of polymer materials, in particular to a method for preparing a polyimide / silicon dioxide composite material, and the invention also relates to the polyimide / silicon dioxide composite material prepared by the method. Background technique [0002] With its unique aromatic heterocyclic rigid structure, polyimide material has excellent high temperature resistance, mechanical properties, insulation properties, corrosion resistance, radiation resistance and other performance characteristics. High-performance polyimide is widely used in the aerospace field. It is used in space vehicles as multi-layer thermal insulation blankets, flexible substrates for solar cell arrays, and insulating protective layers for circuit systems. Usually in low-space orbit environments, the surface of materials It is oxidized and corroded by atomic oxygen, resulting in obvious erosion and performance degradation, which ultimately affect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D06M11/79C08J7/06C08L79/08C08K3/36D06M101/30
CPCC08J7/06C08J2379/08C08K3/36D06M11/79D06M2101/30
Inventor 武德珍李小兰田国峰
Owner BEIJING UNIV OF CHEM TECH
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