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Method for constructing semiconductor and metal sulfide heterogeneous electrode by chemical vapor deposition

A chemical vapor deposition, metal sulfide technology, applied in the direction of electrode, gaseous chemical plating, electrode shape/type, etc., can solve problems such as hindering charge carrier transport, reducing the number of active sites of promoters, and achieving low cost , easy to control, high efficiency

Inactive Publication Date: 2019-12-31
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the laboratory usually formulates metal sulfide powder into a sol, and uses a spin-coating process to form a film on the surface of the substrate. This method has two disadvantages. (1) There are a lot of particles between the co-catalyst and the semiconductor and co-catalyst particles. The contact junction barrier hinders the transport of charge carriers; (2) After the co-catalyst is deposited into a film, the effective active area in contact with the electrolyte and the incident light wave front will inevitably decrease, reducing the number of active sites of the co-catalyst

Method used

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  • Method for constructing semiconductor and metal sulfide heterogeneous electrode by chemical vapor deposition
  • Method for constructing semiconductor and metal sulfide heterogeneous electrode by chemical vapor deposition
  • Method for constructing semiconductor and metal sulfide heterogeneous electrode by chemical vapor deposition

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Effect test

Embodiment 1

[0026] ReS 2 Nanosheets were prepared by chemical vapor deposition in a vacuum tube furnace with ReO 3 One-step synthesis of ReS on Si substrate with S powder as raw material 2 Nanosheets.

[0027] The specific experimental steps are as follows: first prepare a piece of Si with a size of 1.5cm×2cm, ultrasonically clean it with acetone, ethanol, and deionized water for 20 minutes, and then clean it with BOE (buffered oxide etchant) for 30 seconds. Then, the cleaned Si was placed in the ReO 3 powder on the ceramic boat, and place the ceramic boat in the middle of the vacuum tube furnace, then weigh 500 mg of S powder and put it into another ceramic boat, and place the ceramic boat upstream from the middle of the vacuum tube furnace at 15 cm. Then, the pressure in the vacuum tube furnace was evacuated to 7.5×10 with a vacuum pump. -2 Torr, and then refill it with high-purity nitrogen to the normal pressure state, repeat this three times, and finally keep the nitrogen flow at ...

Embodiment 2

[0030] ReS 2 Nanosheets were prepared by chemical vapor deposition in a vacuum tube furnace with ReO 3 and S powder as raw material in TiO 2 One-step synthesis on the substrate. The specific experimental steps are as follows: Weigh ReO 3 5mg, S powder 500mg, respectively placed in two ceramic boats. Take 50mgTiO 2 Nanofibers placed in ReO 3 powder on. Then, will be loaded with ReO 3 and TiO 2 The ceramic boat is placed in the middle of the vacuum tube furnace, and the ceramic boat filled with S powder is placed 15 cm upstream from the middle of the vacuum tube furnace. Then, the pressure in the vacuum tube furnace was evacuated to 7.5×10 with a vacuum pump. -2 Torr, and then refill it with high-purity nitrogen to the normal pressure state, repeat this three times, and finally keep the nitrogen flow at a flow rate of 50 sccm and continue to feed. Next, raise the temperature inside the furnace to 750° C. at a heating rate of 10° C. / min, and keep the temperature at 750°...

Embodiment 3

[0033] MoS 2 Nanosheets were deposited on MoO in a vacuum tube furnace by chemical vapor deposition 3 and S powder as raw materials were synthesized in one step on Si substrate. The specific experimental steps are as follows: first prepare a piece of Si with a size of 1.5cm×2cm, ultrasonically clean it with acetone, ethanol, and deionized water for 20 minutes, and then clean it with BOE (buffered oxide etchant) for 30 seconds. Weigh 5mgMoO 3 Put in a ceramic boat. Then, the cleaned p-Si was placed in the MoO 3 powdered ceramic boat, and place the ceramic boat in the middle of a vacuum tube furnace. Take by weighing 500mg sulfur powder again and put into another ceramic boat, and place the upstream of the ceramic boat apart from the 15cm place in the middle of the vacuum tube furnace. Then, the pressure in the vacuum tube furnace was evacuated to 7.5×10 with a vacuum pump. -2Torr, and then refill it with high-purity nitrogen to the normal pressure state, repeat this three...

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Abstract

The invention relates to a method for constructing a semiconductor and metal sulfide heterogeneous electrode by chemical vapor deposition. The method comprises the following processes: (1), a semiconductor is cleaned to serve as a substrate; (2), metal oxide powder and sulfur powder are taken; (3), a semiconductor substrate is placed on a ceramic boat I filled with metal oxide, the ceramic boat Iis put in the middle of a vacuum tube furnace, and then a ceramic boat II filled with sulfur powder is put 15 cm from the middle upstream of the vacuum tube furnace; (4), pumping is performed by a vacuum pump until pressure in a quartz tube of the vacuum tube furnace reaches 7.5*10<-2> Torr, the quartz tube is refilled with high purity nitrogen at a flow rate of 200 sccm to the normal pressure state, the flow rate of high purity nitrogen is adjusted to 50 sccm and is maintained after the operation is repeated three times; (5), the temperature control program of the vacuum tube furnace is edited; (6), a heterogeneous composite sample of semiconductor substrate supported metal sulfide nano-sheet arrays can be obtained can be obtained after the vapor deposition process is completed and the vacuum tube furnace is naturally cooled to room temperature. The method has low preparation process cost and high efficiency.

Description

technical field [0001] The invention relates to a method for constructing semiconductor and metal sulfide heterogeneous electrodes by chemical vapor deposition, which belongs to the field of nanometer functional materials. Background technique [0002] Due to the large-scale use of fossil fuels, it has led to increasingly serious environmental problems and energy crises, which has prompted people to look for new clean energy sources. Hydrogen is considered to be an ideal clean energy that is expected to replace fossil fuels. Photoelectrochemical cell water splitting technology can effectively convert renewable solar energy into clean hydrogen energy. At present, many semiconductors (such as Si, TiO 2 , ZnO, CuO, Fe 2 o 3 etc.) have shown the potential to collect photogenerated carriers and stimulate hydrogen or oxygen evolution reactions, but most semiconductors have the problem of insufficient surface catalytic activity. In recent years, two-dimensional transition meta...

Claims

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Application Information

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IPC IPC(8): C23C16/30C25B1/04C25B11/03C25B11/06
CPCC23C16/305C25B1/04C25B1/55C25B11/031C25B11/051C25B11/075Y02E60/36
Inventor 许小勇赵恒潘楼王成忠
Owner YANGZHOU UNIV