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Nitride single crystal

A nitride, single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of not being available

Inactive Publication Date: 2019-12-31
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the conventional liquid phase epitaxy method, single crystals of nitrides having high crystallinity cannot be obtained.

Method used

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  • Nitride single crystal
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055]

[0056] The aluminum nitride (AlN) crystal of Example 1 was produced by implementing the following steps in a vacuum chamber.

[0057] As a raw material of a solvent (flux), individual elements (metal elements) shown in Table 1 below were weighed and put into a crucible made of alumina. The total mass of raw materials was adjusted to 250 g. All the raw materials in the crucible were mixed and heated in an argon atmosphere at 1650° C. to melt and integrate all the raw materials. By cooling the molten mixture of raw materials to room temperature, a mass of the mixture of raw materials is obtained.

[0058] The bulk of the mixture of raw materials was placed again in the crucible made of alumina. The bulk of the mixture of raw materials in the crucible was heated in a high-frequency heating furnace to be melted. Furthermore, a homogeneous solvent was obtained by stirring the molten raw material mixture using a stirring jig provided on the upper portion of the crucibl...

Embodiment 2～11、 comparative example 1～3

[0070] In Examples 2 to 11 and Comparative Examples 1 to 3, monomers (metal monomers) of each element shown in Table 1 below were used as raw materials for solvents (fluxes). In Examples 2-11 and Comparative Examples 1-3, the molar ratio of each element in a solvent was adjusted to the value shown in following Table 1. In Examples 2-11 and Comparative Examples 1-3, the ratio of argon and nitrogen in the mixed gas supplied into a vacuum chamber was adjusted to the range of 9:1-6:4. The AlN crystals of Examples 2 to 11 and Comparative Examples 1 to 3 were independently produced by the same method as in Example 1 except for these matters.

[0071] When the thickness of the AlN crystal is 20 μm or less, the surface of the aluminum nitride crystal is not polished. The AlN crystals of Examples 2 to 11 and Comparative Examples 1 to 3 were individually analyzed by the same method as in Example 1 except for this matter.

[0072] As a result of the analysis, it was confirmed that the ...

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Abstract

Provided is a nitride single crystal having high crystallinity. The nitride single crystal 10 has a wurtzite crystal structure and has a boron content of 0.5 to 251 mass ppm.

Description

technical field [0001] The present invention relates to a nitride single crystal. Background technique [0002] Single crystals of nitrides (so-called nitride semiconductors) have attracted attention as materials for light-emitting devices or power transistors that emit short-wavelength light from blue to ultraviolet bands. In particular, single crystals of aluminum nitride have attracted much attention as materials for substrates of ultraviolet light-emitting devices. Nitride single crystals are produced, for example, by vapor phase growth methods such as sublimation or halide vapor phase epitaxy (HVPE), or liquid phase growth methods such as flux methods (see Patent Documents 1 to 4 below). [0003] In the sublimation method described in Patent Document 1 below, a nitride as a raw material is sublimated at a high temperature, and the nitride is precipitated on the surface of a low-temperature seed crystal to crystallize it. In the sublimation method, since the crystal gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38
CPCC30B9/10C30B29/403
Inventor 大井户敦川崎克己山泽和人
Owner TDK CORPARATION