Silicon substrate etching solution

A technology for etching solution and silicon substrate, which is applied in the direction of surface etching composition, chemical instrument and method, etc., can solve the problems of reducing the etching speed of silicon oxide film, abnormality, and bad pattern, etc., so as to improve the etching selectivity ratio and not easy to decompose , the effect of preventing decomposition and discoloration

Active Publication Date: 2020-01-07
OCI
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  • Description
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Problems solved by technology

In this case, when only pure phosphoric acid is used to etch the silicon nitride film, the silicon oxide film will be etched in addition to the silicon nitride film due to the miniaturization of devices, and various defects and pattern abnormalities may occur and other problems, so it is necessary to further reduce the etching rate of the silicon oxide film

Method used

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  • Silicon substrate etching solution
  • Silicon substrate etching solution
  • Silicon substrate etching solution

Examples

Experimental program
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Effect test

experiment example 1

[0071] Composition of silicon substrate etching solution

[0072] Table 1 below shows the composition of the silicon substrate etching solution according to the embodiment.

[0073] Table 1

[0074] Classification Silicon additive (ppm) Fluorinated compounds (ppm) Example 1 500 - Example 2 2000 - Example 3 1000 - Example 4 800 - Example 5 800 - Example 6 800 - Example 7 800 - Example 8 800 500

[0075] The silicon substrate etching solutions of Examples 1 to 8 contained 85% by weight of phosphoric acid and the balance of water, and contained silicon additives and fluorine-containing compounds in ppm units described in Table 1.

[0076] In Example 8, ammonium fluoride was used as the fluorine-containing compound.

[0077] The silicon additive used in the silicon substrate etching solutions of Examples 1 to 8 is represented by Chemical Formula 1 having functional groups shown in Table 2 below.

[0078] C...

experiment example 2

[0104] Composition of silicon substrate etching solution

[0105] Table 5 below shows the composition of the silicon substrate etching solution according to the embodiment.

[0106] table 5

[0107] Classification Silicon additive (ppm) Fluorinated compounds (ppm) Example 9 500 - Example 10 2000 - Example 11 1000 - Example 12 800 - Example 13 800 - Example 14 800 - Example 15 800 - Example 16 800 500

[0108] The silicon substrate etching solutions of Examples 9 to 16 contained 85% by weight of phosphoric acid and the balance of water, and contained silicon additives and fluorine-containing compounds in ppm units shown in Table 5.

[0109] In Example 16, hydrogen fluoride was used as the fluorine-containing compound.

[0110] The silicon additive used in the silicon substrate etching solutions of Examples 9 to 16 is represented by Chemical Formula 2 having functional groups shown in Table 6 below.

[0...

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Abstract

The present invention relates to a silicon substrate etching solution, and more particularly, to a silicon substrate etching solution capable of improving the etching selectivity of a silicon nitridefilm and improving the high-temperature stability compared with a silicon oxide film when etching the silicon nitride film.

Description

technical field [0001] The present invention relates to a silicon substrate etching solution, and in more detail, to a silicon substrate etching solution capable of improving the etching selectivity to a silicon nitride film and improving high-temperature stability compared with a silicon oxide film when etching a silicon nitride film . Background technique [0002] Currently, there are various methods for etching a silicon nitride film and a silicon oxide film, and the main methods used are a dry etching method and a wet etching method. [0003] The dry etching method generally refers to an etching method using a gas, and has an advantage of isotropy over the wet etching method, but is much lower in productivity than the wet etching method and is expensive, so the wet etching method tends to be widely used. [0004] In general, a well-known wet etching method is a method using phosphoric acid as an etching solution. In this case, when only pure phosphoric acid is used to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08
CPCC09K13/08C09K13/06
Inventor 柳浩成文暎善李浚银张平和
Owner OCI
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