Silicon substrate etching solution

Abstract

The present invention relates to a silicon substrate etching solution, and more particularly, to a silicon substrate etching solution capable of improving the etching selectivity of a silicon nitridefilm and improving the high-temperature stability compared with a silicon oxide film when etching the silicon nitride film.

Description

technical field [0001] The present invention relates to a silicon substrate etching solution, and in more detail, to a silicon substrate etching solution capable of improving the etching selectivity to a silicon nitride film and improving high-temperature stability compared with a silicon oxide film when etching a silicon nitride film . Background technique [0002] Currently, there are various methods for etching a silicon nitride film and a silicon oxide film, and the main methods used are a dry etching method and a wet etching method. [0003] The dry etching method generally refers to an etching method using a gas, and has an advantage of isotropy over the wet etching method, but is much lower in productivity than the wet etching method and is expensive, so the wet etching method tends to be widely used. [0004] In general, a well-known wet etching method is a method using phosphoric acid as an etching solution. In this case, when only pure phosphoric acid is used to ...

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Problems solved by technology

In this case, when only pure phosphoric acid is used to etch the silicon nitride film, the silicon oxide film will be etched in addition to the silicon nitride film due to the miniaturization of devices, and various defects and pattern abnormalities may occur and other problems, so it is necessary to further reduce the etching rate of the silicon oxide film

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