Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increasing the threshold voltage of IGBT transistors, affecting the performance of semiconductor devices, and enhancing impurity doping concentration, etc. Achieve the effect of improving thickness consistency, ensuring depth consistency, and reducing production costs
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[0035] In order to make the purpose, advantages and features of the present invention clearer, the technical solution proposed by the present invention will be further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0036] Please refer to figure 1 , The present invention provides a method for manufacturing a semiconductor device, including the following steps:
[0037] S1, providing a semiconductor substrate, and etching the semiconductor substrate to form a gate trench in the semiconductor substrate;
[0038] S2, forming a gate in the gate trench, and etch back the gate to a certain depth in the gate trench to form an etch-back groove;
[0039] S3, forming an inversion doped region and a homotype heavily doped region in the semiconduct...
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