Transverse GaN-based enhanced junction field effect transistor device and preparation method thereof

Abstract

The invention discloses a transverse GaN-based enhanced junction field effect transistor device and a preparation method thereof. According to the device, a multi-chip vertical strip-shaped structurep-GaN is obtained on an n-GaN substrate through adoption of grooving and epitaxial regrowth or ion implantation, a plurality of thin p-n junction transverse n-type channels are formed with the n-GaN substrate, and the n-type channel is enabled to be in a complete depletion state of a p-n junction built-in electric field under zero bias through control of the thickness of the channel and the p-typeand n-type doping concentrations, namely, the device is in an off state, and the channel can be enabled to be in an on state only by applying a forward bias voltage, namely, the device has a positivethreshold voltage. Large-current output of the device is ensured by multiple channels.

Description

technical field

[0001] The invention relates to an enhanced junction field effect transistor (JFET), in particular to a lateral GaN-based enhanced junction field effect transistor. Background technique

[0002] As the core devices of power electronic systems such as power conversion, control circuits, and power management, power semiconductor devices are widely used in important fields such as power transmission, transportation, and consumer electronics. GaN-based field-effect transistors have broad application prospects due to their advantages such as high operating frequency, low on-resistance, high power density, and high breakdown voltage. AlGaN / GaN heterojunction high electron mobility transistor (HEMT) develops rapidly because the growth process is relatively easy to realize, while GaN-based junction field effect transistor (JFET) needs to use regrowth or ion implantation process to realize the p-n junction. The process is more complicated, so its development is relat...

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