Thin-film capacitor

A thin-film capacitor and thin-film technology, applied in the energy field, can solve problems such as the decrease in the bonding force between electrodes and ceramic thin films, and achieve high reliability, good energy storage performance, and low dielectric loss

Active Publication Date: 2020-02-07
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the decrease in the surface roughness of the electrode will lead to a significant decrease in the binding force between the electrode and the ceramic film, and the decrease in the binding force is also fatal to the energy storage ceramic film.

Method used

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preparation example Construction

[0023] The preparation method of the energy storage ceramic thin film provided by the present invention comprises:

[0024] S1, providing a metal substrate;

[0025] S2, using the first simple metal as the first target material, depositing a first metal prefabricated layer on the metal substrate by using a magnetic filter multi-arc ion plating method, the material of the first metal prefabricated layer is compatible with the metal substrate The material of the bottom is the same;

[0026] S3, using the second metal simple substance as the second target material, depositing a second metal prefabricated layer on the first metal prefabricated layer by using a magnetic filter multi-arc ion plating method, and while depositing and forming the second metal prefabricated layer, An alloy prefabricated layer is formed between the first metal prefabricated layer and the second metal prefabricated layer, and the alloy prefabricated layer is an alloy formed by the first metal and the sec...

Embodiment 1

[0071] With a flexible low-roughness copper foil as the substrate, the thickness is 6 μm, the surface roughness is 10 nm, placed in a vacuum chamber, and evacuated to 3×10 -3 Pa. The vacuum chamber is heated to 150°C, the holding time is 10min, filled with argon, the flow rate of argon is 20sccm, and the vacuum degree of the vacuum chamber is 2×10 -2 Pa, turn on the Hall ion source, set the voltage of the Hall ion source to 1000V, the current to 0.5A, and treat for 1min to make the surface tension of the copper foil reach 60 dynes.

[0072] Maintain a vacuum of 2.0×10 -2 Pa, the argon gas flow rate is 20sccm, using metal copper as the target material, turn on the first magnetic filter multi-arc ion plating power supply, adjust the arc current to 50A, draw the current 9A, apply the bias voltage to the copper foil to 5V, and the deposition time is 35s, A copper prefabricated layer with a thickness of 35 nm is formed on the copper foil, and the first magnetic filter multi-arc i...

Embodiment 2

[0079] With a flexible low-roughness copper foil as the substrate, the thickness is 10 μm, the surface roughness is 20 nm, placed in a vacuum chamber, and vacuumed to 3×10 -3 Pa. The vacuum chamber is heated to 100°C, the holding time is 20min, filled with argon, the flow rate of argon is 30sccm, and the vacuum degree of the vacuum chamber is 3×10 -2 Pa, turn on the Hall ion source, set the voltage of the Hall ion source to 800V, and the current to 0.6A, and treat for 5min to make the surface tension of the copper foil reach 65 dynes.

[0080] Maintain a vacuum of 3.0×10 -2 Pa, the argon gas flow rate is 30sccm, and the metal copper is used as the target material. Turn on the first magnetic filter multi-arc ion plating power supply, adjust the arc current to 55A, draw the current to 10A, apply the bias voltage to the copper foil to 6V, and deposit for 45s. A copper prefabricated layer with a thickness of 45 nm is formed on the copper foil, and the first magnetic filter multi...

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Abstract

The invention relates to a thin-film capacitor. The thin-film capacitor comprises a dielectric thin-film and an electrode layer, wherein the dielectric thin-film comprises a metal substrate, and a first metal layer, a second metal layer, a second metal oxide layer and a second metal oxide thin-film which are sequentially formed on the metal substrate, and the electrode layer is formed on the second metal oxide thin-film; the material of the first metal layer is the same as the material of the metal substrate; and an alloy layer formed by combining the second metal in the second metal layer with the first metal in the first metal layer is also arranged on the surface of the first metal layer. In the thin-film capacitor, the dielectric thin-film is an energy storage ceramic thin-film, and has high dielectric constant and good energy storage performance. Moreover, the layers in the dielectric thin-film are firmly bonded, and the reliability of the dielectric thin-film is high. The dielectric thin-film is used for replacing high-molecular thin-film, thereby promoting the trends toward miniaturization, light weight, high integration, and multi-functionalization of thin film capacitors.

Description

[0001] This application is a divisional application of the invention application with "Application No.: 201810848153.X, filing date: July 27, 2018, named: energy storage thin film and its preparation method". technical field [0002] The invention relates to the field of energy, in particular to film capacitors. Background technique [0003] Traditional energy storage ceramic thin films include a substrate and a ceramic thin film. Generally, increasing the surface roughness of the substrate can increase the contact area between the ceramic thin film and the substrate and improve the bonding force. Moreover, when the substrate is used as an electrode, the increase of its surface roughness can also increase the capacitance of the ceramic thin film. However, the increase in the surface roughness of the electrode increases the defect concentration at the contact surface between the electrode and the ceramic film, thereby reducing the breakdown field strength and energy storage d...

Claims

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Application Information

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IPC IPC(8): H01G4/12H01G4/33
CPCC23C14/325C23C14/16C23C14/5853C23C14/08C23C14/083Y02E60/13Y02E60/14
Inventor 冯雪王志建陈颖
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
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