High-brightness light-emitting diode epitaxial wafer and preparation method thereof
A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency and poor antistatic ability, and achieve the effects of improving luminous efficiency, overall quality, and activation rate
Inactive Publication Date: 2020-02-07
上海亚曼光电科技有限公司
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Problems solved by technology
[0005] The technical problem to be solved by the present invention is to provide a high-brightness light-emitting diode epitaxial wafer and its preparation method, which can solve the problems of low light-emitting efficiency and poor antistatic ability of light-emitting diodes in the prior art
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Embodiment Construction
[0033] Please refer to figure 1 , the present embodiment provides a method for preparing a high-brightness light-emitting diode epitaxial wafer, comprising the following steps:
[0034] Step 1. Provide a substrate 1. The material of the substrate 1 can be selected from sapphire, silicon carbide or other materials according to actual needs.
[0035] Step 2, growing buffer layer 2, non-doped gallium nitride layer 3, N-type layer 4, quantum well layer 5 and P-type layer 6 on the surface of substrate 1 in sequence.
[0036] In this embodiment, metal-organic compound chemical vapor deposition equipment is used to grow epitaxial wafers, a mixed gas of high-purity hydrogen and high-purity nitrogen is used as the carrier gas, high-purity ammonia is used as the nitrogen source, and trimethylgallium is used as the gallium. Trimethylindium is used as an indium source, trimethylaluminum is used as an aluminum source, silane is used as a dopant for the N-type layer 4, and magnesocene is u...
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Abstract
The invention discloses a high-brightness light-emitting diode epitaxial wafer. The high-brightness light-emitting diode epitaxial wafer includes a substrate and further includes a buffer layer, an un-doped gallium nitride layer, an N-type layer, a quantum well layer, and a P-type layer which sequentially grow along the surface of the substrate; the buffer layer includes first gallium nitride layers and second gallium nitride layers that alternately grow; the first layer and the last layer of the buffer layer are both the first gallium nitride layers; the growth temperature of the first gallium nitride layers is lower than the growth temperature of the second gallium nitride layers; the growth of the P-type layer includes at least two growth stages; and each growth stage includes processesof high-temperature growth, annealing and cooling, and low-temperature growth. The buffer layer of the high-brightness light-emitting diode epitaxial wafer disclosed by the invention avoids the occurrence of non-radiative recombination light emission; the mobility of holes in the P-type layer is increased, therefore, the probability of the recombination between the holes in the P-type layer and electrons generated by the N-type layer is increased; and through the synergistic effect of the buffer layer and the P-type layer, the light-emitting efficiency and the antistatic ability of the light-emitting diode are improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a high-brightness light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are semiconductor electronic components that convert electrical energy into light energy. In recent years, light-emitting diodes have been widely used in the fields of application and market demand. They have been widely used in the fields of display, TV lighting decoration and lighting. The epitaxial wafer in the light emitting diode is the core part of the light emitting diode, therefore, the development of the epitaxial wafer of the light emitting diode has attracted much attention. [0003] The existing manufacturing process of light-emitting diodes is to fabricate an N-type nitride layer, a P-type nitride layer, and a quantum well layer between the two on a semiconductor substrate, and the N-type nitride lay...
Claims
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IPC IPC(8): H01L33/06H01L33/14H01L33/00
CPCH01L33/005H01L33/0095H01L33/06H01L33/145
Inventor 谢丁生谢红
Owner 上海亚曼光电科技有限公司